Browsing by Author Huang, MQ

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TitleAuthor(s)Issue DateViews
 
A humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film
Journal:Journal of Applied Physics
Li, GQLai, PTHuang, MQZeng, SHLi, BCheng, YC
2000
178
 
Improvement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation
Proceeding/Conference:Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
Huang, MQLai, PTMa, ZJCheng, YCLiu, BY
1992
34
 
Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation
Journal:Applied Physics Letters
Huang, MQLai, PTMa, ZJWong, HCheng, YC
1992
96
 
Influence of backsurface argon bombardment on SiO2-Si interface characteristics
Journal:Applied Physics Letters
Lai, PTHuang, MQZeng, XZeng, SHLi, GQ
1996
173
 
Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Ma, ZJLai, PTCheng, YCHuang, MQ
1991
35
 
A new multi-function thin-film microsensor based on Ba1-xLaxTiO3
Journal:Smart Materials and Structures
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2000
164
 
New thin-film humidity and thermal micro-sensor with Al/SrNbxTi1-xO3/SiO2/Si structure
Journal:Sensors and Actuators, A: Physical
Li, GQLai, PTZeng, SHHuang, MQLi, B
1999
129
 
On recovery of hot-carrier-induced mobility degradationin off-state thermally-nitrided-oxide N-MOSFET's
Proceeding/Conference:Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
Ma, ZJLai, PTHuang, MQCheng, YCLiu, BY
1992
31
 
Photo-, thermal and humidity sensitivity characteristics of sr1-xLaxTiO3 film on SiO2/Si substrate
Journal:Sensors and Actuators, A: Physical
Li, GQLai, PTZeng, SHHuang, MQCheng, YC
1997
116
 
Photoelectrical properties of Ba1-xLaxTiO3 thin-film resistor
Journal:Sensors and Actuators, A: Physical
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2000
183
 
Sensing properties of Ba1-xLaxNbyTi1-yO3 (x=0.25%, y=0.25%) thin-film on SiO2/Si substrate
Journal:Materials Research Society Symposium - Proceedings
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2001
99
 
A study of various oxide/silicon interfaces by Ar + backsurface bombardment
Journal:Journal of Applied Physics
Lai, PTLi, GQHuang, MQZeng, SHCheng, YC
1999
174
 
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Journal:Microelectronics Reliability
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
1998
109
 
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting
Huang, MQLai, PTXu, JPZeng, SHLi, GQCheng, YC
1997
89
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