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Browsing by Author Huang, XD
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Showing results 9 to 28 of 35
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Title
Author(s)
Issue Date
Views
Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure
Journal:
IEEE Electron Device Letters
Zhang, C
Li, D
Lai, PT
Huang, XD
2021
1
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Qian, LX
Huang, XD
Lai, PT
2011
105
Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor
Journal:
IEEE Transactions on Electron Devices
Huang, XD
MA, Y
SONG, J
Lai, PT
Tang, WM
2018
37
Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor
Journal:
ECS Solid State Letters
Huang, XD
Song, J
Lai, PT
2015
48
Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode
Journal:
RSC Advances
Huang, XD
Zhang, F
Gan, XF
Huang, QA
Yang, JZ
Lai, PT
Tang, WM
2018
45
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Electron Devices
Huang, XD
Sin, JKO
Lai, PT
2011
160
HfTiON as charge-trapping layer for nonvolatile memory applications
Proceeding/Conference:
ECS Meeting
Huang, XD
Lai, PT
2012
46
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature
Journal:
Journal of Display Technology
Huang, XD
Ma, Y
SONG, J
Lai, PT
2016
45
Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications
Proceeding/Conference:
ECS Transactions
Huang, XD
Lai, PT
2015
57
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:
Applied Physics Letters
Huang, XD
Liu, L
Xu, JP
Lai, PT
2011
158
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:
Microelectronics Reliability
Chen, JX
Xu, JP
Liu, L
Huang, XD
Lai, PT
2014
44
Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment
Journal:
IEEE Electron Device Letters
Huang, XD
SONG, J
Lai, PT
2016
35
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Huang, XD
Liu, L
Xu, JP
Lai, PT
2011
178
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment
Journal:
IEEE Electron Device Letters
Huang, XD
SONG, J
Lai, PT
2017
32
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Chen, JX
Xu, JP
Liu, L
HUANG, XD
Lai, PT
Xu, HX
2014
27
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:
Applied Physics A: Materials Science and Processing
Huang, XD
Lai, PT
Sin, JKO
2012
156
Lycium barbarum polysaccharide-glycoprotein preventative treatment ameliorates aversive
Journal:
Neural Regeneration Research
Fu, YW
Peng, YF
Huang, XD
Yang, Y
Huang, L
Xi, Y
Hu, ZF
Lin, S
So, KF
Ren, CR
2021
50
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
Microelectronics Reliability
SHI, R
Huang, XD
Sin, JKO
Lai, PT
2016
45
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:
IEEE Transactions on Device and Materials Reliability
Shi, RP
Huang, XD
Leung, CH
Sin, JKO
Lai, PT
2015
29
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:
IEEE Transactions on Device and Materials Reliability
Huang, XD
Sin, JKO
Lai, PT
2012
130