Browsing by Author Huang, XD

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TitleAuthor(s)Issue DateViews
 
Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure
Journal:IEEE Electron Device Letters
Zhang, CLi, DLai, PTHuang, XD
2021
1
 
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Qian, LXHuang, XDLai, PT
2011
110
 
Effects of Metal-Hydroxyl and InOx Defects on Performance of InGaZnO Thin-Film Transistor
Journal:IEEE Transactions on Electron Devices
Huang, XDMA, YSONG, JLai, PTTang, WM
2018
 
Effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor
Journal:ECS Solid State Letters
Huang, XDSong, JLai, PT
2015
56
 
Electrochemical characteristics of amorphous silicon carbide film as a lithium-ion battery anode
Journal:RSC Advances
Huang, XDZhang, FGan, XFHuang, QAYang, JZLai, PTTang, WM
2018
 
Fluorinated SrTiO3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Electron Devices
Huang, XDSin, JKOLai, PT
2011
171
 
HfTiON as charge-trapping layer for nonvolatile memory applications
Proceeding/Conference:ECS Meeting
Huang, XDLai, PT
2012
60
 
High-Performance Amorphous InGaZnO Thin-Film Transistor with ZrLaO Gate Dielectric Fabricated at Room Temperature
Journal:Journal of Display Technology
Huang, XDMa, YSONG, JLai, PT
2016
52
 
Improved Charge-Trapping Performance of Hf-Doped SrTiO3 for Nonvolatile Memory Applications
Proceeding/Conference:ECS Transactions
Huang, XDLai, PT
2015
 
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:Applied Physics Letters
Huang, XDLiu, LXu, JPLai, PT
2011
166
 
Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory
Journal:Microelectronics Reliability
Chen, JXXu, JPLiu, LHuang, XDLai, PT
2014
 
Improved Performance of Scaled-Down α -InGaZnO Thin-Film Transistor by Ar Plasma Treatment
Journal:IEEE Electron Device Letters
Huang, XDSONG, JLai, PT
2016
41
 
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications
Journal:IEEE Transactions on Device and Materials Reliability
Huang, XDLiu, LXu, JPLai, PT
2011
197
 
Improved Stability of α -InGaZnO Thin-Film Transistor under Positive Gate Bias Stress by Using Fluorine Plasma Treatment
Journal:IEEE Electron Device Letters
Huang, XDSONG, JLai, PT
2017
37
 
Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer
Journal:IEEE Transactions on Device and Materials Reliability
Chen, JXXu, JPLiu, LHUANG, XDLai, PTXu, HX
2014
25
 
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics A: Materials Science and Processing
Huang, XDLai, PTSin, JKO
2012
229
 
Lycium barbarum polysaccharide-glycoprotein preventative treatment ameliorates aversive
Journal:Neural Regeneration Research
Fu, YWPeng, YFHuang, XDYang, YHuang, LXi, YHu, ZFLin, SSo, KFRen, CR
2021
50
 
Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications
Journal:Microelectronics Reliability
SHI, RHuang, XDSin, JKOLai, PT
2016
62
 
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
Shi, RPHuang, XDLeung, CHSin, JKOLai, PT
2015
35
 
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Device and Materials Reliability
Huang, XDSin, JKOLai, PT
2012
135
Showing results 9 to 28 of 35 < previous   next >