Browsing by Author Huang, XD

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TitleAuthor(s)Issue DateViews
Effects of fluorine incorporation on the electrical properties of silicon MOS capacitor with La2O3 gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2011
67
 
2018
 
2015
24
 
2018
 
2011
89
 
2012
1245
 
2016
 
2015
26
 
2011
70
 
2014
31
 
2016
7
 
2011
78
 
2017
 
2014
 
LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications
Journal:Applied Physics A: Materials Science and Processing
2012
1436
 
2016
17
 
Nb-Doped La2O3 as Charge-Trapping Layer for Nonvolatile Memory Applications
Journal:IEEE Transactions on Device and Materials Reliability
2015
23
 
Nitrided La2O3 as charge-trapping layer for nonvolatile memory applications
Journal:IEEE Transactions on Device and Materials Reliability
2012
84
 
2011
88
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:IEEE Transactions on Device and Materials Reliability
2011
86