Showing results 11 to 20 of 20
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Title | Author(s) | Issue Date | Views | |
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1992 | ||||
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy Journal:Advanced Materials for Optics and Electronics | 1997 | |||
Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries Journal:Surface Review and Letters | 2001 | 47 | ||
New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy Journal:Journal of Crystal Growth | 1997 | |||
1994 | 61 | |||
1993 | ||||
1996 | 72 | |||
1996 | ||||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 | 60 | ||
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics | 1995 |