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Showing results 2 to 9 of 9 < previous

	Title	Author(s)	Issue Date	Views
	Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth	Zhang, J Zhang, XM Matsumura, A Marinopoulou, A Hartung, J Anwar, N Parry, G Xie, MH Mokler, SM Fernandez, JM Joyce, BA	1995	39
	Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides Journal:Surface Science	Xie, MH Zhang, J Mokler, SM Fernández, J Joyce, BA	1994	26
	Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics	Ohtani, N Mokler, SM Xie, MH Zhang, J Zhang, X Joyce, BA	1994	29
	Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth	Mokler, SM Ohtani, N Xie, MH Zhang, X Joyce, BA	1993	46
	In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces Journal:Applied Physics Letters	Mokler, SM Ohtani, N Xie, MH Zhang, J Joyce, BA	1992	26
	Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy Journal:Applied Physics Letters	Xie, MH Zhang, J Mokler, SM Fernández, JM Joyce, BA	1994	55
	RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures Journal:Surface Science	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	17
	Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	52

Showing results 2 to 9 of 9 < previous