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	Title	Author(s)	Issue Date	Views
	Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics	Ohtani, N Mokler, SM Xie, MH Zhang, J Zhang, X Joyce, BA	1994	29
	Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth	Mokler, SM Ohtani, N Xie, MH Zhang, X Joyce, BA	1993	46
	In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces Journal:Applied Physics Letters	Mokler, SM Ohtani, N Xie, MH Zhang, J Joyce, BA	1992	26
	Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter)	Cheung, SH Zheng, LX Xie, MH Tong, SY Ohtani, N	2001	105
	Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters	Xie, MH Zheng, LX Cheung, SH Ng, YF Wu, H Tong, SY Ohtani, N	2000	256
	RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures Journal:Surface Science	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	17
	Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter)	Xie, MH Cheung, SH Zheng, LX Ng, YF Wu, H Ohtani, N Tong, SY	2000	131
	Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	52

Showing results 1 to 8 of 8