Showing results 3 to 8 of 8
< previous
Title | Author(s) | Issue Date | Views | |
---|---|---|---|---|
1992 | ||||
Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter) | 2001 | 114 | ||
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2000 | 273 | ||
1993 | ||||
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | 147 | ||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 | 60 |