Showing results 7 to 8 of 8
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Title | Author(s) | Issue Date | Views | |
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Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | 147 | ||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 | 60 |