Browsing by Author Panda, BK

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TitleAuthor(s)Issue DateViews
 
Depolarization and exciton-like shifts in modulation-doped single rectangular and diffusion-modified quantum wells under uniform electric fields
Journal:Journal of Physics Condensed Matter
Fung, SPanda, SPanda, BK
1999
167
 
Doppler-broadening measurements of microvoids at the Au/GaAs interface
Journal:Applied Physics A Materials Science & Processing
Ling, CCShan, YYPanda, BKFleischer, SBeling, CDFung, S
1995
190
 
Effect of conduction band nonparabolicity on the dark current in a quantum well infrared detector
Journal:Journal of Applied Physics
Panda, SPanda, BKFung, S
2007
39
 
EL2 deep donor state in semi-insulating GaAs revealed by frequency dependent positron mobility measurements
Journal:Physical Review Letters
Au, HLLing, CCPanda, BKLee, TCBeling, CDFung, S
1994
169
 
EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy
Journal:Physical Review B (Condensed Matter)
Shan, YYLing, CCDeng, AHPanda, BKBeling, CDFung, S
1997
166
 
Electric field effect on the diffusion modified AlGaAs/GaAs single quantum well
Journal:Journal of Applied Physics
Panda, SPanda, BKFung, SBeling, CD
1996
185
 
Electron momentum distribution in semiconductors: A comparative study of the Compton profile and positron angular correlation methods
Proceeding/Conference:Materials Science Forum
Panda, BKFung, SBeling, CD
1997
154
 
Electron-positron momentum density in diamond, Si, and Ge
Journal:Physical Review B (Condensed Matter)
Panda, BKFung, SBeling, CD
1996
169
 
Electron-positron momentum distributions and positron lifetime in semiconductors in the generalized gradient approximation
Journal:Physical Review B (Condensed Matter)
Panda, BKLiMing, WFung, SBeling, CD
1997
100
 
On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy
Journal:Journal of Physics Condensed Matter
Beling, CDLiMing, WShan, YYCheung, SHFung, SPanda, BKSeitsonen, AP
1998
194
 
Positron deep level transient spectroscopy - A new application of positron annihilation to semiconductor physics
Journal:Applied Surface Science
Beling, CDFung, SAu, HLLing, CCReddy, CVDeng, AHPanda, BK
1997
169
 
Positron effective mass in silicon
Journal:Physical Review B (Condensed Matter)
Panda, BKShan, YYFung, SBeling, CD
1995
158
 
Positron lifetime analysis from generalized constrained least-squares technique
Journal:Physica Status Solidi (B) Basic Research
Deng, AHPanda, BKFung, SBeling, CD
1997
62
 
Positron lifetime analysis using generalised constrained least squares method
Proceeding/Conference:Proceedings of the Sixth Sinica Positron Annihilation Conference
Deng, AHPanda, BKFung, SHYBeling, CD
1996
86
 
Positron lifetime analysis using the matrix inverse Laplace transformation method
Journal:Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Deng, AHPanda, BKFung, SBeling, CDSchrader, DM
1998
180
 
Positron lifetime analysis using the matrix inversion laplace transformation method
Proceeding/Conference:Materials Science Forum
Deng, AHPanda, BKFung, SBeling, CD
1997
112
 
Positron Lifetime in Elemental Semiconductors in the Generalized Gradient Approximation
Journal:Physica Status Solidi (B) Basic Research
Liming, WPanda, BKFung, SBeling, CD
1997
149
 
Positron lifetime in Si and GaAs treated using the density-gradient-correction methods
Proceeding/Conference:Materials Science Forum
Panda, BKFung, SBeling, CD
1997
154
 
Quantum confined stark effect and optical absorption in Al xGa 1-xAs/GaAs/Al xGa 1-xAs single quantum well
Journal:Physica Status Solidi (B) Basic Research
Panda, SPanda, BKFung, SBeling, CD
1996
29
 
Quantum confined stark shift in arbitrarily shaped single Quantum wells by Fourier series method
Journal:Solid State Communications
Panda, SPanda, BKFung, SBeling, CD
1996
175
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