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Showing results 21 to 40 of 58 < previous next >

Title	Author(s)	Issue Date	Views
Fabrication and electrical performance of CVD-grown MoS2 transistor Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Wen, M Xu, JP Liu, L Zhao, X Lai, PT Tang, WM	2017	19
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	Ji, F Xu, JP Lai, PT Guan, JG	2008	166
GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer Journal:IEEE Transactions on Electron Devices	LIU, L Choi, HW Xu, JP Tang, WM Lai, PT	2018	51
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Chen, WB Xu, JP Lai, PT Li, YP Xu, SG	2006	180
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric Journal:Applied Physics Letters	LIU, L Choi, HW Xu, JP Lai, PT	2017	53
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate Journal:IEEE Transactions on Electron Devices	Cheng, ZX Liu, L Xu, JP Huang, Y Lai, PT Tang, WM	2016	37
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference	Liu, LN Choi, HW Xu, JP Lai, PT	2016	27
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric Journal:IEEE Transactions on Electron Devices	Wen, M Xu, JP Liu, L Lai, PT Tang, WM	2017	47
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer Journal:Physica Status Solidi - Rapid Research Letters	LIU, L Choi, HW Xu, JP Lai, PT	2017	57
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Liu, LN Choi, HW Lai, PT Xu, JP	2016	51
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Zhao, X Xu, JP Liu, L Lai, PT Tang, WM	2019	18
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Yang, BL Lin, LM Xu, JP Lai, PT	2006	202
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011	192
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer Journal:IEEE Transactions on Device and Materials Reliability	Lu, HH Xu, JP Liu, L Lai, PT Tang, WM	2017	48
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices	Lu, HH Liu, L Xu, JP Lai, PT Tang, WM	2017	50
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer Journal:Applied Physics Letters	Cheng, ZX Xu, JP Liu, L Huang, Y Lai, PT Tang, WM	2016	56
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer Journal:Applied Physics Letters	HUANG, Y XU, JP LIU, L CHENG, ZX Lai, PT TANG, WM	2017	26
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation Journal:Applied Physics Letters	Huang, Y Xu, JP Liu, L Lai, PT Tang, WM	2016	47
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment Journal:Applied Surface Science	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2019	18
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric Journal:IEEE Electron Device Letters	Zhao, XY Xu, JP Liu, L Lai, PT Tang, WM	2020	20

Showing results 21 to 40 of 58 < previous next >