HKU Scholars Hub: Browsing DSpace

Browsing by Author XU, JP

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中

or enter first few letters:

Showing results 25 to 44 of 58 < previous next >

Title	Author(s)	Issue Date	Views
High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric Journal:Applied Physics Letters	LIU, L Choi, HW Xu, JP Lai, PT	2017	53
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate Journal:IEEE Transactions on Electron Devices	Cheng, ZX Liu, L Xu, JP Huang, Y Lai, PT Tang, WM	2016	37
Impacts of Ti incorporation on the electrical properties and reliability of GaAs metal-oxide-semiconductor capacitors with high-k NdTiON as gate dielectric Proceeding/Conference:IEEE Semiconductor Interface Specialists Conference	Liu, LN Choi, HW Xu, JP Lai, PT	2016	27
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric Journal:IEEE Transactions on Electron Devices	Wen, M Xu, JP Liu, L Lai, PT Tang, WM	2017	47
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer Journal:Physica Status Solidi - Rapid Research Letters	LIU, L Choi, HW Xu, JP Lai, PT	2017	57
Improved electrical properties of GaAs MOS capacitor by using HfLaON passivation layer Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Liu, LN Choi, HW Lai, PT Xu, JP	2016	51
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Zhao, X Xu, JP Liu, L Lai, PT Tang, WM	2019	18
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Yang, BL Lin, LM Xu, JP Lai, PT	2006	202
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011	192
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer Journal:IEEE Transactions on Device and Materials Reliability	Lu, HH Xu, JP Liu, L Lai, PT Tang, WM	2017	48
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices	Lu, HH Liu, L Xu, JP Lai, PT Tang, WM	2017	50
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer Journal:Applied Physics Letters	Cheng, ZX Xu, JP Liu, L Huang, Y Lai, PT Tang, WM	2016	56
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer Journal:Applied Physics Letters	HUANG, Y XU, JP LIU, L CHENG, ZX Lai, PT TANG, WM	2017	26
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation Journal:Applied Physics Letters	Huang, Y Xu, JP Liu, L Lai, PT Tang, WM	2016	47
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment Journal:Applied Surface Science	Huang, Y Xu, JP Liu, L Cheng, ZX Lai, PT Tang, WM	2019	18
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric Journal:IEEE Electron Device Letters	Zhao, XY Xu, JP Liu, L Lai, PT Tang, WM	2020	20
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011	181
Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO Journal:Applied Physics A: Materials Science and Processing	Lai, PT Xu, JP Li, CX Chan, CL	2005	144
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer Journal:Microelectronics Reliability	Lu, HH Xu, JP Liu, L Wang, LS Lai, PT Tang, WM	2016	46
Improved performance of low-voltage pentacene OTFTs by incorporating la to hafinium oxide gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Deng, LF Lai, PT Tao, QB Choi, HW Xu, JP Chen, WB Che, CM Liu, YR	2010	111

Showing results 25 to 44 of 58 < previous next >