Showing results 54 to 58 of 58
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
A simplified post-soft-breakdown current model for MOS devices Journal:Applied Physics A: Materials Science and Processing | 2009 | 123 | ||
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings | 2005 | 168 | ||
Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications Journal:IEEE Transactions on Electron Devices | 2019 | 13 | ||
| 2007 | 97 | |||
Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 111 |