Showing results 1 to 5 of 5
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
A 2-D threshold-voltage model for small MOSFET with quantum-mechanical effects Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 147 | ||
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects Journal:Microelectronics Reliability | 2008 | 222 | ||
| 2006 | 116 | |||
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric Journal:Microelectronics Reliability | 2007 | 240 | ||
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 203 |