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Showing results 29 to 43 of 43 < previous

	Title	Author(s)	Issue Date	Views
	Parent–child number application activities predict children’s math trajectories from preschool to primary school Journal:Journal of Educational Psychology	Zhang, X HU, B ZOU, X REN, L	2020
	Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy Journal:Physical Review Letters	Zou, X Chan, YC Webb, DP Lam, YW Hu, YF Beling, CD Fung, S Weng, HM	2000	185
	Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006	Lai, PT Xu, JP Li, CX Zou, X Chen, WB	2007
	Probing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopy Journal:Journal of Materials Research	Zou, X Webb, DP Chan, YC Lam, YW Hu, YF Fung, S Beling, CD	1998
	Quantification of Temperature‐Dependent Charge Separation and Recombination Dynamics in Non‐Fullerene Organic Photovoltaics Journal:Advanced Functional Materials	Chan, CCS Ma, C Zou, X Xing, Z Zhang, G Yip, HL Taylor, RA Yan, H Wong, KS Chow, CYP	2021	3
	Simulation and measurement of topological phase transitions with alkaline-earth-metal atoms in optical lattices Journal:Physical Review A: covering atomic, molecular, and optical physics and quantum information	Wang, B Wu, Y Zheng, Z Zou, X	2019	25
	Slow Hole Transfer Kinetics Lead to High Blend Photoluminescence of Unfused A–D–A′–D–A‐Type Acceptors with Unfavorable Highest Occupied Molecular Orbitals Offset Journal:Solar RRL	Zou, X Yu, H Qi, Z Liu, B Xing, Z Chan, CCS Chow, CYP Pan, D Yan, H Wong, KS	2022	3
	Study of microvoids in high-rate a-Si:H using positron annihilation Proceeding/Conference:Materials Research Society Symposium Proceedings	Zou, X Webb, DP Lin, SH Lam, YW Chan, YC Hu, YF Beling, CD Fung, SHY	1997
	Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings	Lai, PT Li, CX Xu, JP Zou, X Chan, CL	2005
	Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor Journal:Applied Physics Letters	Zou, X Xu, JP Li, CX Lai, PT	2007	190
	The interplay between father–child and mother–child numeracy activities and preschool children’s mathematical skills Journal:Contemporary Educational Psychology	ZOU, X Zhang, X Ouyang, X	2022
	Threshold voltage model of SiGe channel pMOSFET without Si cap layer Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Zou, X Li, CX Xu, JP Lai, PT Chen, WB	2006	121
	A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer Journal:Microelectronics Reliability	Zou, X Xu, JP Li, CX Lai, PT Chen, WB	2007	215
	Unraveling the Temperature Dependence of Exciton Dissociation and Free Charge Generation in Nonfullerene Organic Solar Cells Journal:Solar RRL	Ma, C Chan, CCS Zou, X Yu, H Zhang, J Yan, H Wong, KS Chow, PCY	2021	12
	Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness Journal:Thin Solid Films	Xu, JP Zou, X Lai, PT Li, CX Chan, CL	2009	200

Showing results 29 to 43 of 43 < previous