Browsing by Author XU, JP

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TitleAuthor(s)Issue DateViews
 
2016
28
 
2014
101
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
147
 
2006
169
 
1998
389
 
2017
53
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
2007
194
 
2016
33
 
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:IEEE Transactions on Device and Materials Reliability
2012
172
 
Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC
Journal:Applied Physics A: Materials Science and Processing
2005
184
 
2011
222
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
2006
179
 
2019
22
 
2016
81
 
2017
83
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
133
 
Electrical properties of different NO-annealed oxynitrides
Proceeding/Conference:Journal of Non-Crystalline Solids
1999
176
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
118
 
Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
2016
63
 
2005
1068