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Conference Paper: Deep level transient spectroscopic study of electron irradiated p-type 6H-SiC

TitleDeep level transient spectroscopic study of electron irradiated p-type 6H-SiC
Authors
Zhong, ZQGong, MChen, XLing, FCCFung, SHYBeling, CD
Issue Date2006
Citation
光电信息材料会议,2006年6月25-30日, 北京 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109750

 

DC FieldValueLanguage
dc.contributor.authorZhong, ZQen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-26T01:35:40Z-
dc.date.available2010-09-26T01:35:40Z-
dc.date.issued2006en_HK
dc.identifier.citation光电信息材料会议,2006年6月25-30日, 北京zh_HK
dc.identifier.urihttp://hdl.handle.net/10722/109750-
dc.languageengen_HK
dc.relation.ispartof光电信息材料会议zh_HK
dc.titleDeep level transient spectroscopic study of electron irradiated p-type 6H-SiCen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, SHY: sfung@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.authorityFung, SHY=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.hkuros128949en_HK

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