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Conference Paper: Is the Ga vacancy related defect the residual acceptor of gallium antimonide?

TitleIs the Ga vacancy related defect the residual acceptor of gallium antimonide?
Authors
Ling, FCCChen, XWeng, HMHang, DSLui, MKPLam, CHCheah, KWLi, KFMui, WKBeling, CDFung, SHY
Issue Date2003
PublisherTohoku University.
Citation
Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects, p. 146-152 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109801

 

DC FieldValueLanguage
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorHang, DSen_HK
dc.contributor.authorLui, MKPen_HK
dc.contributor.authorLam, CHen_HK
dc.contributor.authorCheah, KWen_HK
dc.contributor.authorLi, KFen_HK
dc.contributor.authorMui, WKen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, SHYen_HK
dc.date.accessioned2010-09-26T01:37:51Z-
dc.date.available2010-09-26T01:37:51Z-
dc.date.issued2003en_HK
dc.identifier.citationProceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects, p. 146-152en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109801-
dc.languageengen_HK
dc.publisherTohoku University.en_HK
dc.relation.ispartofProceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defectsen_HK
dc.titleIs the Ga vacancy related defect the residual acceptor of gallium antimonide?en_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, SHY: sfung@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, SHY=rp00695en_HK
dc.identifier.hkuros80031en_HK
dc.identifier.spage146en_HK
dc.identifier.epage152en_HK

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