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Book Chapter: Doping of wide band gap nanostructures: ZnO and GaN

TitleDoping of wide band gap nanostructures: ZnO and GaN
Authors
Djurisic, AXie, MHLeung, YH
Issue Date2010
PublisherAmerican Scientific Publishers
Citation
Doping of wide band gap nanostructures: ZnO and GaN. In Chen, W (Ed.), Doped nanomaterials and nanodevices. Vol. 1, Luminescence and applications, p. 101-133. Stevenson Ranch, Calif.: American Scientific Publishers, 2010 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/119794
ISBN
9781588831071

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, Aen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorLeung, YHen_HK
dc.date.accessioned2010-09-26T09:09:36Z-
dc.date.available2010-09-26T09:09:36Z-
dc.date.issued2010en_HK
dc.identifier.citationDoping of wide band gap nanostructures: ZnO and GaN. In Chen, W (Ed.), Doped nanomaterials and nanodevices. Vol. 1, Luminescence and applications, p. 101-133. Stevenson Ranch, Calif.: American Scientific Publishers, 2010en_HK
dc.identifier.isbn9781588831071-
dc.identifier.urihttp://hdl.handle.net/10722/119794-
dc.languageengen_HK
dc.publisherAmerican Scientific Publishersen_HK
dc.relation.ispartofDoped nanomaterials and nanodevices. Vol. 1, Luminescence and applicationsen_HK
dc.titleDoping of wide band gap nanostructures: ZnO and GaNen_HK
dc.typeBook_Chapteren_HK
dc.identifier.emailDjurisic, A: dalek@hkusua.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hkusua.hku.hken_HK
dc.identifier.emailLeung, YH: lyuhang@gmail.comen_HK
dc.identifier.authorityDjurisic, A=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.hkuros170019en_HK
dc.identifier.spage101en_HK
dc.identifier.epage133en_HK
dc.publisher.placeStevenson Ranch, Calif.-

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