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Conference Paper: Deep level transient spectroscopic study of nitrogen-implanted ZnO single crystal

TitleDeep level transient spectroscopic study of nitrogen-implanted ZnO single crystal
Authors
Ding, GLing, CCAnwand, WBrauer, GSkorupa, W
Issue Date2010
Citation
The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, 31 May-4 June 2010. How to Cite?
DescriptionPoster Session: FrP39
Persistent Identifierhttp://hdl.handle.net/10722/127148

 

DC FieldValueLanguage
dc.contributor.authorDing, Gen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-10-31T13:08:53Z-
dc.date.available2010-10-31T13:08:53Z-
dc.date.issued2010en_HK
dc.identifier.citationThe 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, 31 May-4 June 2010.en_HK
dc.identifier.urihttp://hdl.handle.net/10722/127148-
dc.descriptionPoster Session: FrP39-
dc.languageengen_HK
dc.relation.ispartofInternational Symposium on Compound Semiconductors, ISCS 2010-
dc.titleDeep level transient spectroscopic study of nitrogen-implanted ZnO single crystalen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDing, G: h0892059@hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.hkuros183029en_HK
dc.description.otherThe 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan, 31 May-4 June 2010.-

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