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Article: Impurity effect on weak antilocalization in the topological insulator Bi 2Te 3

TitleImpurity effect on weak antilocalization in the topological insulator Bi 2Te 3
Authors
He, HTWang, GZhang, TSou, IKWong, GKLWang, JNLu, HZShen, SQZhang, FC
KeywordsBerry phase
Fe impurity
Impurity effect
Low temperatures
Magnetoconductance
Issue Date2011
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2011, v. 106 n. 16, article no. 166805 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevLett.106.166805
AbstractWe study the weak antilocalization (WAL) effect in topological insulator Bi 2Te 3 thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5nm Bi 2Te 3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities. © 2011 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/134447
ISSN
0031-9007
2021 Impact Factor: 9.185
2020 SCImago Journal Rankings: 3.688
ISI Accession Number ID
WOS:000290097100007
Funding AgencyGrant Number
Research Grant Council of the HKSARHKUST16/CRF/08
HKU10/CRF/08
603407
604910
UGC of the HKSARSEG_CUHK06)
Funding Information:

We wish to acknowledge useful discussions with W. Q. Chen. This work was partially supported by the Research Grant Council of the HKSAR under Grants No. HKUST16/CRF/08, No. HKU10/CRF/08, No. 603407, and No. 604910. The PPMS facilities used for magnetotransport measurements is supported by the Special Equipment Grant (SEG_CUHK06) from the UGC of the HKSAR.

References
References in Scopus
Grants
Nano-Spintronics - Quantum Control of Electron Spins in Semiconductors

 

DC FieldValueLanguage
dc.contributor.authorHe, HTen_HK
dc.contributor.authorWang, Gen_HK
dc.contributor.authorZhang, Ten_HK
dc.contributor.authorSou, IKen_HK
dc.contributor.authorWong, GKLen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorLu, HZen_HK
dc.contributor.authorShen, SQen_HK
dc.contributor.authorZhang, FCen_HK
dc.date.accessioned2011-06-17T09:20:59Z-
dc.date.available2011-06-17T09:20:59Z-
dc.date.issued2011en_HK
dc.identifier.citationPhysical Review Letters, 2011, v. 106 n. 16, article no. 166805-
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/134447-
dc.description.abstractWe study the weak antilocalization (WAL) effect in topological insulator Bi 2Te 3 thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5nm Bi 2Te 3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities. © 2011 American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCopyright 2011 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevLett.106.166805-
dc.subjectBerry phase-
dc.subjectFe impurity-
dc.subjectImpurity effect-
dc.subjectLow temperatures-
dc.subjectMagnetoconductance-
dc.titleImpurity effect on weak antilocalization in the topological insulator Bi 2Te 3en_HK
dc.typeArticleen_HK
dc.identifier.emailLu, HZ: luhz@hku.hken_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.authorityLu, HZ=rp01599en_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.106.166805en_HK
dc.identifier.pmid21599398-
dc.identifier.scopuseid_2-s2.0-79960627796en_HK
dc.identifier.hkuros185921en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960627796&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue16en_HK
dc.identifier.spagearticle no. 166805-
dc.identifier.epagearticle no. 166805-
dc.identifier.isiWOS:000290097100007-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectNano-Spintronics - Quantum Control of Electron Spins in Semiconductors-
dc.identifier.scopusauthoridHe, HT=9633178800en_HK
dc.identifier.scopusauthoridWang, G=46062566400en_HK
dc.identifier.scopusauthoridZhang, T=7404373935en_HK
dc.identifier.scopusauthoridSou, IK=7005758902en_HK
dc.identifier.scopusauthoridWong, GKL=7402527572en_HK
dc.identifier.scopusauthoridWang, JN=43762170400en_HK
dc.identifier.scopusauthoridLu, HZ=24376662200en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK
dc.identifier.issnl0031-9007-

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