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Article: High-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays

TitleHigh-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays
Authors
Li, KHMa, ZChoi, HW
KeywordsEtch mask
Finite difference time domain simulations
High quality factors
Nano sphere lithography
Nanopillars
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 98 n. 7, article no. 071106 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3556281
AbstractA hexagonal-close-packed ordered array of nanorings was fabricated on GaN with a modified nanosphere lithography process. The spheres initially served as etch masks for the formation of closed-packed nanopillars. The spheres were then shrunk and, with a layer of oxide deposited, the roles of the spheres became masks for liftoff. The final etch produced nanorings with wall widths of 140 nm. Photopumped lasing with splitting modes was observed at room temperature, with a low lase threshold of ∼10 mJ/cm 2 and high quality factor of ∼5000, via whispering-gallery modes. The resonant frequencies were verified through finite-difference time-domain simulations. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/139236
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000287507200006
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7118/09E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7118/09E).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, KHen_HK
dc.contributor.authorMa, Zen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2011-09-23T05:47:28Z-
dc.date.available2011-09-23T05:47:28Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 7, article no. 071106-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139236-
dc.description.abstractA hexagonal-close-packed ordered array of nanorings was fabricated on GaN with a modified nanosphere lithography process. The spheres initially served as etch masks for the formation of closed-packed nanopillars. The spheres were then shrunk and, with a layer of oxide deposited, the roles of the spheres became masks for liftoff. The final etch produced nanorings with wall widths of 140 nm. Photopumped lasing with splitting modes was observed at room temperature, with a low lase threshold of ∼10 mJ/cm 2 and high quality factor of ∼5000, via whispering-gallery modes. The resonant frequencies were verified through finite-difference time-domain simulations. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 7, article no. 071106 and may be found at https://doi.org/10.1063/1.3556281-
dc.subjectEtch mask-
dc.subjectFinite difference time domain simulations-
dc.subjectHigh quality factors-
dc.subjectNano sphere lithography-
dc.subjectNanopillars-
dc.titleHigh-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arraysen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=98&issue=7, article no. 071106&spage=&epage=&date=2011&atitle=High-Q+whispering-gallery+mode+lasing+from+nanosphere-patterned+GaN+nanoring+arrays-
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3556281en_HK
dc.identifier.scopuseid_2-s2.0-79951889595en_HK
dc.identifier.hkuros192481en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79951889595&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume98en_HK
dc.identifier.issue7en_HK
dc.identifier.spagearticle no. 071106-
dc.identifier.epagearticle no. 071106-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000287507200006-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, KH=8976237500en_HK
dc.identifier.scopusauthoridMa, Z=8504594000en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.issnl0003-6951-

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