File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1016/j.jcrysgro.2011.08.029
- Scopus: eid_2-s2.0-80053320706
- WOS: WOS:000296269000016
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Growth characteristics of topological insulator Bi 2Se 3 films on different substrates
| Title | Growth characteristics of topological insulator Bi 2Se 3 films on different substrates | ||||
|---|---|---|---|---|---|
| Authors | |||||
| Keywords | A1. Substrates A3. Molecular beam epitaxy B1. Bismuth compounds B2. Topological insulator | ||||
| Issue Date | 2011 | ||||
| Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | ||||
| Citation | Journal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 How to Cite? | ||||
| Abstract | Molecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved. | ||||
| Persistent Identifier | http://hdl.handle.net/10722/143779 | ||||
| ISSN | 2021 Impact Factor: 1.830 2020 SCImago Journal Rankings: 0.513 | ||||
| ISI Accession Number ID |
Funding Information: We wish to thank T.L. Wang and N. Wang for the TEM measurements, and S.Y. Chui for his help in XRD experiments. The project is financially supported by a General Research Fund (no. HKU 7061/10P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region. | ||||
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wang, ZY | en_HK |
| dc.contributor.author | Li, HD | en_HK |
| dc.contributor.author | Guo, X | en_HK |
| dc.contributor.author | Ho, WK | en_HK |
| dc.contributor.author | Xie, MH | en_HK |
| dc.date.accessioned | 2011-12-21T08:55:10Z | - |
| dc.date.available | 2011-12-21T08:55:10Z | - |
| dc.date.issued | 2011 | en_HK |
| dc.identifier.citation | Journal Of Crystal Growth, 2011, v. 334 n. 1, p. 96-102 | en_HK |
| dc.identifier.issn | 0022-0248 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/143779 | - |
| dc.description.abstract | Molecular -beam epitaxy of topological insulator Bi 2Se 3 on different substrates is carried out, including on clean and hydrogen-terminated Si(111), bismuth (Bi) induced Si(1 1 1)(3×3) and (3×3) surfaces, GaN, and several selenide compounds. Epifilms surface and structural properties are characterized and the effects of surface structure and lattice misfit are indicated. It is found that substrates that are inert to chemical reaction with Bi and/or selenium (Se) and have small lattice misfits with Bi 2Se 3 appear advantageous to single-crystalline Bi 2Se 3 film growth. By using vicinal substrates, rotation or twin domains are effectively suppressed. © 2011 Elsevier B.V. All rights reserved. | en_HK |
| dc.language | eng | en_US |
| dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | en_HK |
| dc.relation.ispartof | Journal of Crystal Growth | en_HK |
| dc.subject | A1. Substrates | en_HK |
| dc.subject | A3. Molecular beam epitaxy | en_HK |
| dc.subject | B1. Bismuth compounds | en_HK |
| dc.subject | B2. Topological insulator | en_HK |
| dc.title | Growth characteristics of topological insulator Bi 2Se 3 films on different substrates | en_HK |
| dc.type | Article | en_HK |
| dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=334&spage=96&epage=102&date=2011&atitle=Growth+characteristics+of+topological+insulator+Bi2Se3+films+on+different+substrates | en_US |
| dc.identifier.email | Li, HD: hdli1978@hkucc.hku.hk | en_HK |
| dc.identifier.email | Xie, MH: mhxie@hku.hk | en_HK |
| dc.identifier.authority | Li, HD=rp00739 | en_HK |
| dc.identifier.authority | Xie, MH=rp00818 | en_HK |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1016/j.jcrysgro.2011.08.029 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-80053320706 | en_HK |
| dc.identifier.hkuros | 197905 | en_US |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-80053320706&selection=ref&src=s&origin=recordpage | en_HK |
| dc.identifier.volume | 334 | en_HK |
| dc.identifier.issue | 1 | en_HK |
| dc.identifier.spage | 96 | en_HK |
| dc.identifier.epage | 102 | en_HK |
| dc.identifier.isi | WOS:000296269000016 | - |
| dc.publisher.place | Netherlands | en_HK |
| dc.identifier.scopusauthorid | Wang, ZY=23978772700 | en_HK |
| dc.identifier.scopusauthorid | Li, HD=36441549600 | en_HK |
| dc.identifier.scopusauthorid | Guo, X=34770102100 | en_HK |
| dc.identifier.scopusauthorid | Ho, WK=18040061300 | en_HK |
| dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_HK |
| dc.identifier.issnl | 0022-0248 | - |