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Conference Paper: Reducing silicon-substrate parasitics of on-chip transformers

TitleReducing silicon-substrate parasitics of on-chip transformers
Authors
Jiang, HLi, ZTien, NC
Issue Date2002
Citation
Proceedings Of The Ieee Micro Electro Mechanical Systems (Mems), 2002, p. 649-652 How to Cite?
AbstractThree-terminal transformers have been fabricated on 20-μm-deep silicon-oxide blocks formed in the silicon substrate. The thick isolation blocks drastically reduced the parasitics between the devices and the silicon substrate underneath. The quality factors and the self-resonant frequencies were thus increased by more than 100% and 70%, respectively. Such oxide blocks also greatly reduce the cross talk between adjacent devices by as much as 15dB.
Persistent Identifierhttp://hdl.handle.net/10722/148998
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hen_HK
dc.contributor.authorLi, Zen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:17:46Z-
dc.date.available2012-06-20T06:17:46Z-
dc.date.issued2002en_HK
dc.identifier.citationProceedings Of The Ieee Micro Electro Mechanical Systems (Mems), 2002, p. 649-652en_US
dc.identifier.urihttp://hdl.handle.net/10722/148998-
dc.description.abstractThree-terminal transformers have been fabricated on 20-μm-deep silicon-oxide blocks formed in the silicon substrate. The thick isolation blocks drastically reduced the parasitics between the devices and the silicon substrate underneath. The quality factors and the self-resonant frequencies were thus increased by more than 100% and 70%, respectively. Such oxide blocks also greatly reduce the cross talk between adjacent devices by as much as 15dB.en_HK
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)en_HK
dc.titleReducing silicon-substrate parasitics of on-chip transformersen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0036118190en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036118190&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage649en_HK
dc.identifier.epage652en_HK
dc.identifier.scopusauthoridJiang, H=36120322000en_HK
dc.identifier.scopusauthoridLi, Z=24306828000en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK

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