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Conference Paper: A micromachined RF microrelay with electrothermal actuation

TitleA micromachined RF microrelay with electrothermal actuation
Authors
Wang, YLi, ZMcCormick, DTTien, NC
KeywordsElectrothermal actuator
Lateral contact
Low voltage
Microrelay
RF switch
Issue Date2003
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 2003, v. 103 n. 1-2, p. 231-236 How to Cite?
DOI: http://dx.doi.org/10.1016/S0924-4247(02)00337-0
AbstractThis paper reports the design and fabrication of a low-voltage lateral-contact microrelay for RF applications. The silicon surface micromachined relay utilizes electrothermal actuators and low-stress silicon nitride as a structural connection as well as electrical and thermal isolation. The sidewall contact is sputtered gold. The driving voltage is measured to be as low as 8 V. RF testing shows that the microrelay has an off-state isolation of -20 dB at 12 GHz. The simplicity of this four-mask fabrication process provides the possibility of integration with other passive RF MEMS components. © 2003 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/149001
ISSN
0924-4247
2021 Impact Factor: 4.291
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000180418200032
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, Yen_HK
dc.contributor.authorLi, Zen_HK
dc.contributor.authorMcCormick, DTen_HK
dc.contributor.authorTien, NCen_HK
dc.date.accessioned2012-06-20T06:17:47Z-
dc.date.available2012-06-20T06:17:47Z-
dc.date.issued2003en_HK
dc.identifier.citationSensors And Actuators, A: Physical, 2003, v. 103 n. 1-2, p. 231-236en_US
dc.identifier.issn0924-4247en_HK
dc.identifier.urihttp://hdl.handle.net/10722/149001-
dc.description.abstractThis paper reports the design and fabrication of a low-voltage lateral-contact microrelay for RF applications. The silicon surface micromachined relay utilizes electrothermal actuators and low-stress silicon nitride as a structural connection as well as electrical and thermal isolation. The sidewall contact is sputtered gold. The driving voltage is measured to be as low as 8 V. RF testing shows that the microrelay has an off-state isolation of -20 dB at 12 GHz. The simplicity of this four-mask fabrication process provides the possibility of integration with other passive RF MEMS components. © 2003 Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_HK
dc.relation.ispartofSensors and Actuators, A: Physicalen_HK
dc.subjectElectrothermal actuatoren_HK
dc.subjectLateral contacten_HK
dc.subjectLow voltageen_HK
dc.subjectMicrorelayen_HK
dc.subjectRF switchen_HK
dc.titleA micromachined RF microrelay with electrothermal actuationen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTien, NC: nctien@hku.hken_HK
dc.identifier.authorityTien, NC=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0924-4247(02)00337-0en_HK
dc.identifier.scopuseid_2-s2.0-0037439026en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037439026&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume103en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage231en_HK
dc.identifier.epage236en_HK
dc.identifier.isiWOS:000180418200032-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridWang, Y=7601495931en_HK
dc.identifier.scopusauthoridLi, Z=24306828000en_HK
dc.identifier.scopusauthoridMcCormick, DT=7202521902en_HK
dc.identifier.scopusauthoridTien, NC=7006532826en_HK
dc.identifier.issnl0924-4247-

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