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Article: A general model for minority carrier transport in polysilicon emitters

TitleA general model for minority carrier transport in polysilicon emitters
Authors
Jalali, BYang, ES
Issue Date1989
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1989, v. 32 n. 4, p. 323-327 How to Cite?
AbstractA model for the base current of the polysilicon emitter bipolar transistor is presented. An analytical expression for the base current is derived, demonstrating the individual contributions of the interfacial potential barrier and the transport through the polysilicon layer. This model represents an improvement over the previous models by predicting the variation with polysilicon thickness as well as the nonlinear temperature dependence of the base current. © 1989.
Persistent Identifierhttp://hdl.handle.net/10722/154889
ISSN
0038-1101
2021 Impact Factor: 1.916
2020 SCImago Journal Rankings: 0.457

 

DC FieldValueLanguage
dc.contributor.authorJalali, Ben_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:03Z-
dc.date.available2012-08-08T08:31:03Z-
dc.date.issued1989en_US
dc.identifier.citationSolid State Electronics, 1989, v. 32 n. 4, p. 323-327en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154889-
dc.description.abstractA model for the base current of the polysilicon emitter bipolar transistor is presented. An analytical expression for the base current is derived, demonstrating the individual contributions of the interfacial potential barrier and the transport through the polysilicon layer. This model represents an improvement over the previous models by predicting the variation with polysilicon thickness as well as the nonlinear temperature dependence of the base current. © 1989.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleA general model for minority carrier transport in polysilicon emittersen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0024649476en_US
dc.identifier.volume32en_US
dc.identifier.issue4en_US
dc.identifier.spage323en_US
dc.identifier.epage327en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridJalali, B=7004889917en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0038-1101-

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