File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors

TitleElectron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors
Authors
Wang, QLi, PWOsgood Jr, Richard MWang, Wen IYang, Edward SLu, Z
Issue Date1992
Citation
Electron Device Letters, 1992, v. 13 n. 2, p. 83-85 How to Cite?
AbstractElectron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.
Persistent Identifierhttp://hdl.handle.net/10722/154957
ISSN
0193-8576

 

DC FieldValueLanguage
dc.contributor.authorWang, Qen_US
dc.contributor.authorLi, PWen_US
dc.contributor.authorOsgood Jr, Richard Men_US
dc.contributor.authorWang, Wen Ien_US
dc.contributor.authorYang, Edward Sen_US
dc.contributor.authorLu, Zen_US
dc.date.accessioned2012-08-08T08:31:17Z-
dc.date.available2012-08-08T08:31:17Z-
dc.date.issued1992en_US
dc.identifier.citationElectron Device Letters, 1992, v. 13 n. 2, p. 83-85en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154957-
dc.description.abstractElectron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleElectron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026817616en_US
dc.identifier.volume13en_US
dc.identifier.issue2en_US
dc.identifier.spage83en_US
dc.identifier.epage85en_US
dc.identifier.scopusauthoridWang, Q=7406911671en_US
dc.identifier.scopusauthoridLi, PW=7404773352en_US
dc.identifier.scopusauthoridOsgood Jr, Richard M=35596793600en_US
dc.identifier.scopusauthoridWang, Wen I=7501757397en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US
dc.identifier.scopusauthoridLu, Z=23015501300en_US
dc.identifier.issnl0193-8576-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats