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Article: High frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP

TitleHigh frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBP
Authors
Yang, YFHsu, CCYang, ES
KeywordsBipolar Transistors
Chemical Vapour Deposition
Heterojunction Bipolar Transistors
Issue Date1996
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1996, v. 32 n. 7, p. 689-691 How to Cite?
AbstractA C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59GHz, and a maximum oscillation frequency of 68GHz were obtained for a 5 x 15 μm2 self-aligned HBT. A minimum noise figure of 1.4-2.6 was measured in the frequency range of 2-18GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials.
Persistent Identifierhttp://hdl.handle.net/10722/155036
ISSN
0013-5194
2021 Impact Factor: 1.202
2020 SCImago Journal Rankings: 0.375
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYang, YFen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:36Z-
dc.date.available2012-08-08T08:31:36Z-
dc.date.issued1996en_US
dc.identifier.citationElectronics Letters, 1996, v. 32 n. 7, p. 689-691en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155036-
dc.description.abstractA C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59GHz, and a maximum oscillation frequency of 68GHz were obtained for a 5 x 15 μm2 self-aligned HBT. A minimum noise figure of 1.4-2.6 was measured in the frequency range of 2-18GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.subjectBipolar Transistorsen_US
dc.subjectChemical Vapour Depositionen_US
dc.subjectHeterojunction Bipolar Transistorsen_US
dc.titleHigh frequency and low noise C-doped GalnP/GaAs heterojunction bipolar transistor grown by MOCVD using TBA and TBPen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030107740en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030107740&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume32en_US
dc.identifier.issue7en_US
dc.identifier.spage689en_US
dc.identifier.epage691en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0013-5194-

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