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Article: High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage

TitleHigh frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage
Authors
Ou, HJHsu, CCYang, YFYang, ES
KeywordsBipolar Transistors
Heterojunction Bipolar Transistors
Issue Date1997
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 1997, v. 33 n. 8, p. 714-716 How to Cite?
AbstractA carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50GHz and maximum oscillation frequency of 90GHz were obtained for the device. An offset voltage as low as 90mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications.
Persistent Identifierhttp://hdl.handle.net/10722/155050
ISSN
0013-5194
2021 Impact Factor: 1.202
2020 SCImago Journal Rankings: 0.375
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorOu, HJen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorYang, YFen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:39Z-
dc.date.available2012-08-08T08:31:39Z-
dc.date.issued1997en_US
dc.identifier.citationElectronics Letters, 1997, v. 33 n. 8, p. 714-716en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155050-
dc.description.abstractA carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50GHz and maximum oscillation frequency of 90GHz were obtained for the device. An offset voltage as low as 90mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.subjectBipolar Transistorsen_US
dc.subjectHeterojunction Bipolar Transistorsen_US
dc.titleHigh frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltageen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031120712en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031120712&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume33en_US
dc.identifier.issue8en_US
dc.identifier.spage714en_US
dc.identifier.epage716en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridOu, HJ=7005561022en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridYang, YF=7409383278en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.issnl0013-5194-

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