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Article: A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs

TitleA physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs
Authors
Zhang, XFXu, JPLai, PTLi, CX
KeywordsHigh-Κ Dielectric
Mobility
Mosfet
Scattering
Sige
Issue Date2007
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2007, v. 54 n. 11, p. 3097-3102 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2007.906957
AbstractIn this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/ near the high-κ dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high-κ dielectric and interlayer on the hole mobility are discussed. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155399
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000250590200036
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhang, XFen_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, CXen_US
dc.date.accessioned2012-08-08T08:33:17Z-
dc.date.available2012-08-08T08:33:17Z-
dc.date.issued2007en_US
dc.identifier.citationIeee Transactions On Electron Devices, 2007, v. 54 n. 11, p. 3097-3102en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155399-
dc.description.abstractIn this brief, a physical model describing the scattering of holes in the channel of SiGe p-MOSFET caused by roughness and charged defects at/ near the high-κ dielectric/SiO2 interface is proposed. Using the Fang-Howard's variational wave function, the hole mobility is calculated with consideration of the above two scattering mechanisms. The effects of device parameters such as the thicknesses and permittivities of the high-κ dielectric and interlayer on the hole mobility are discussed. © 2007 IEEE.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.subjectHigh-Κ Dielectricen_US
dc.subjectMobilityen_US
dc.subjectMosfeten_US
dc.subjectScatteringen_US
dc.subjectSigeen_US
dc.titleA physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.emailXu, JP:jpxu@eee.hku.hken_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityXu, JP=rp00197en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/TED.2007.906957en_US
dc.identifier.scopuseid_2-s2.0-36248939708en_US
dc.identifier.hkuros150305-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36248939708&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume54en_US
dc.identifier.issue11en_US
dc.identifier.spage3097en_US
dc.identifier.epage3102en_US
dc.identifier.isiWOS:000250590200036-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridZhang, XF=14627948200en_US
dc.identifier.scopusauthoridXu, JP=7407004696en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, CX=22034888200en_US
dc.identifier.issnl0018-9383-

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