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Article: Accurate phase capacitance spectroscopy of transition metal silicon diodes

TitleAccurate phase capacitance spectroscopy of transition metal silicon diodes
Authors
Evans, HLWu, XYang, ESHo, PS
Issue Date1985
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1985, v. 46 n. 5, p. 486-488 How to Cite?
DOI: http://dx.doi.org/10.1063/1.95566
AbstractA complete understanding of Schottky barrier devices requires a knowledge of the electronic states at the metal-semiconductor interface. For this reason, a novel and accurate technique for measuring the capacitance of forward biased Schottky diodes has been developed. It is found that the measurement is extremely sensitive to the phase error and that the lock-in amplifier behaves in a nonlinear fashion at high signal current. These difficulties have been resolved to realize the interface state spectrum of a Pd/silicon Schottky barrier.
Persistent Identifierhttp://hdl.handle.net/10722/155436
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:A1985AFC2900014

 

DC FieldValueLanguage
dc.contributor.authorEvans, HLen_US
dc.contributor.authorWu, Xen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorHo, PSen_US
dc.date.accessioned2012-08-08T08:33:29Z-
dc.date.available2012-08-08T08:33:29Z-
dc.date.issued1985en_US
dc.identifier.citationApplied Physics Letters, 1985, v. 46 n. 5, p. 486-488-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155436-
dc.description.abstractA complete understanding of Schottky barrier devices requires a knowledge of the electronic states at the metal-semiconductor interface. For this reason, a novel and accurate technique for measuring the capacitance of forward biased Schottky diodes has been developed. It is found that the measurement is extremely sensitive to the phase error and that the lock-in amplifier behaves in a nonlinear fashion at high signal current. These difficulties have been resolved to realize the interface state spectrum of a Pd/silicon Schottky barrier.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleAccurate phase capacitance spectroscopy of transition metal silicon diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.95566en_US
dc.identifier.scopuseid_2-s2.0-3943056171en_US
dc.identifier.volume46en_US
dc.identifier.issue5en_US
dc.identifier.spage486en_US
dc.identifier.epage488en_US
dc.identifier.isiWOS:A1985AFC2900014-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridHo, PS=24351761400en_US
dc.identifier.issnl0003-6951-

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