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Article: Effects of Nb on the photo- and thermal sensing characteristics of Sr 0.98La 0.02TiO 3 thin-film resistor

TitleEffects of Nb on the photo- and thermal sensing characteristics of Sr 0.98La 0.02TiO 3 thin-film resistor
Authors
Liu, YRLai, PTLi, GQLi, BHuang, MQLuo, J
KeywordsNb-Doped Sr 1-Xla Xtio 3 Thin Film
Photosensitivity
Thermal Sensitivity
Issue Date2004
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 2004, v. 116 n. 1, p. 178-182 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sna.2004.03.031
AbstractNb-doped Sr 0.98La 0.02TiO 3 thin-film resistor is fabricated on a SiO 2/Si substrate by argon ion-beam sputtering technique. Photo- and thermal sensing characteristics of the thin-film resistor are investigated, and the results show that besides superior sensitivity to visible light, the thin-film resistor has good thermal sensitivity with negative temperature coefficient from room temperature to 200°C, and a maximum value of -6.0%°C -1 at 30°C. With increasing Nb concentration, the photoconductive gain of the thin-film resistor increases, while the temperature coefficient firstly decreases, and then increases. It is proposed that the effects of Nb on thermal sensitivity should be closely related to the grain-boundary defects and impurities of the film, while the effects of Nb on photo-sensing should be associated with the acceptor defects in the grain boundaries. © 2004 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155471
ISSN
0924-4247
2021 Impact Factor: 4.291
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000223903800026
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, YRen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, GQen_US
dc.contributor.authorLi, Ben_US
dc.contributor.authorHuang, MQen_US
dc.contributor.authorLuo, Jen_US
dc.date.accessioned2012-08-08T08:33:40Z-
dc.date.available2012-08-08T08:33:40Z-
dc.date.issued2004en_US
dc.identifier.citationSensors And Actuators, A: Physical, 2004, v. 116 n. 1, p. 178-182en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/155471-
dc.description.abstractNb-doped Sr 0.98La 0.02TiO 3 thin-film resistor is fabricated on a SiO 2/Si substrate by argon ion-beam sputtering technique. Photo- and thermal sensing characteristics of the thin-film resistor are investigated, and the results show that besides superior sensitivity to visible light, the thin-film resistor has good thermal sensitivity with negative temperature coefficient from room temperature to 200°C, and a maximum value of -6.0%°C -1 at 30°C. With increasing Nb concentration, the photoconductive gain of the thin-film resistor increases, while the temperature coefficient firstly decreases, and then increases. It is proposed that the effects of Nb on thermal sensitivity should be closely related to the grain-boundary defects and impurities of the film, while the effects of Nb on photo-sensing should be associated with the acceptor defects in the grain boundaries. © 2004 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.subjectNb-Doped Sr 1-Xla Xtio 3 Thin Filmen_US
dc.subjectPhotosensitivityen_US
dc.subjectThermal Sensitivityen_US
dc.titleEffects of Nb on the photo- and thermal sensing characteristics of Sr 0.98La 0.02TiO 3 thin-film resistoren_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sna.2004.03.031en_US
dc.identifier.scopuseid_2-s2.0-4444317347en_US
dc.identifier.hkuros103215-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4444317347&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume116en_US
dc.identifier.issue1en_US
dc.identifier.spage178en_US
dc.identifier.epage182en_US
dc.identifier.isiWOS:000223903800026-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US
dc.identifier.scopusauthoridLuo, J=7404182885en_US
dc.identifier.issnl0924-4247-

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