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Article: The defects formed before FCC→HCP transition in the intermetallic compound Fe3Ge

TitleThe defects formed before FCC→HCP transition in the intermetallic compound Fe3Ge
Authors
Chen, QChu, WNgan, AHWDuggan, BJ
KeywordsExtrinsic stacking fault
FCC
Fe3Ge
HCP
TEM
Issue Date1999
Citation
Jinshu Xuebao/Acta Metallurgica Sinica, 1999, v. 35 n. 1, p. 1-5 How to Cite?
AbstractThe faulting stage before L12 →DO19 transition was studied by in situ heating experiments in TEM. Many extrinsic stacking faults were observed in situ. The extrinsic stacking faults extended faster and broader than intrinsic stacking faults at 780°C. The extrinsic stacking faults were identified as embryos of the product DO19 phase.
Persistent Identifierhttp://hdl.handle.net/10722/156679
ISSN
0412-1961
2021 Impact Factor: 1.797
2020 SCImago Journal Rankings: 0.381
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, Qen_HK
dc.contributor.authorChu, Wen_HK
dc.contributor.authorNgan, AHWen_HK
dc.contributor.authorDuggan, BJen_HK
dc.date.accessioned2012-08-08T08:43:30Z-
dc.date.available2012-08-08T08:43:30Z-
dc.date.issued1999en_HK
dc.identifier.citationJinshu Xuebao/Acta Metallurgica Sinica, 1999, v. 35 n. 1, p. 1-5en_HK
dc.identifier.issn0412-1961en_HK
dc.identifier.urihttp://hdl.handle.net/10722/156679-
dc.description.abstractThe faulting stage before L12 →DO19 transition was studied by in situ heating experiments in TEM. Many extrinsic stacking faults were observed in situ. The extrinsic stacking faults extended faster and broader than intrinsic stacking faults at 780°C. The extrinsic stacking faults were identified as embryos of the product DO19 phase.en_HK
dc.languageengen_US
dc.relation.ispartofJinshu Xuebao/Acta Metallurgica Sinicaen_HK
dc.subjectExtrinsic stacking faulten_HK
dc.subjectFCCen_HK
dc.subjectFe3Geen_HK
dc.subjectHCPen_HK
dc.subjectTEMen_HK
dc.titleThe defects formed before FCC→HCP transition in the intermetallic compound Fe3Geen_HK
dc.typeArticleen_HK
dc.identifier.emailNgan, AHW: hwngan@hkucc.hku.hken_HK
dc.identifier.emailDuggan, BJ: bjduggan@hkucc.hku.hken_HK
dc.identifier.authorityNgan, AHW=rp00225en_HK
dc.identifier.authorityDuggan, BJ=rp01686en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0041763361en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0041763361&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume35en_HK
dc.identifier.issue1en_HK
dc.identifier.spage1en_HK
dc.identifier.epage5en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridChen, Q=8353179600en_HK
dc.identifier.scopusauthoridChu, W=7402227526en_HK
dc.identifier.scopusauthoridNgan, AHW=7006827202en_HK
dc.identifier.scopusauthoridDuggan, BJ=7005772998en_HK
dc.identifier.issnl0412-1961-

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