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Conference Paper: GaN MQW microdisks pivoted on Si substrate

TitleGaN MQW microdisks pivoted on Si substrate
Authors
Choi, HWYang, BLLai, PTChen, PZhang, XHTeng, JHChua, SJ
Issue Date2007
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (A) Applications And Materials Science, 2007, v. 204 n. 1, p. 272-276 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.200673576
AbstractThe fabrication and characterization of GaN MQW microdisks pivoted on Si is reported in this paper. The GaN microdisks were patterned by photolithography and dry-etched. This is followed by an isotropic wetetch process to remove the Si underneath the GaN microdisks, exposing the bottom GaN surface. A Si pillar is left behind to support the microdisk structure. The smooth GaN/air interface provides a reflectivity of ∼20%. Modal features are observed in the photoluminescence spectrum with a mode spacing of ∼ 1.1 nm. From theoretical predictions whispering gallery (WG) modes are likely to dominate in these microdisks structures. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/158452
ISSN
1862-6300
2021 Impact Factor: 2.170
2020 SCImago Journal Rankings: 0.532
ISI Accession Number ID
WOS:000243787000038
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorYang, BLen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChen, Pen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorTeng, JHen_US
dc.contributor.authorChua, SJen_US
dc.date.accessioned2012-08-08T08:59:42Z-
dc.date.available2012-08-08T08:59:42Z-
dc.date.issued2007en_US
dc.identifier.citationPhysica Status Solidi (A) Applications And Materials Science, 2007, v. 204 n. 1, p. 272-276en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://hdl.handle.net/10722/158452-
dc.description.abstractThe fabrication and characterization of GaN MQW microdisks pivoted on Si is reported in this paper. The GaN microdisks were patterned by photolithography and dry-etched. This is followed by an isotropic wetetch process to remove the Si underneath the GaN microdisks, exposing the bottom GaN surface. A Si pillar is left behind to support the microdisk structure. The smooth GaN/air interface provides a reflectivity of ∼20%. Modal features are observed in the photoluminescence spectrum with a mode spacing of ∼ 1.1 nm. From theoretical predictions whispering gallery (WG) modes are likely to dominate in these microdisks structures. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.en_US
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_US
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.titleGaN MQW microdisks pivoted on Si substrateen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssa.200673576en_US
dc.identifier.scopuseid_2-s2.0-33846439362en_US
dc.identifier.hkuros133739-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846439362&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume204en_US
dc.identifier.issue1en_US
dc.identifier.spage272en_US
dc.identifier.epage276en_US
dc.identifier.isiWOS:000243787000038-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridYang, BL=24777588400en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChen, P=7408356257en_US
dc.identifier.scopusauthoridZhang, XH=13006006900en_US
dc.identifier.scopusauthoridTeng, JH=7202560065en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.issnl1862-6300-

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