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Conference Paper: Stimulated emission from free-standing GaN/Si micro-disk structures

TitleStimulated emission from free-standing GaN/Si micro-disk structures
Authors
Choi, HWHui, KNLai, PTChen, PZhang, XHTeng, JHTripathy, SChua, SJ
Issue Date2007
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
The 2006 International Workshop on Nitride Semiconductors (IWN 2006), Kyoto, Japan, 22-27 October 2006. In Physica Status Solidi (C) Current Topics In Solid State Physics, 2007, v. 4 n. 7, p. 2358-2361 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.200674761
AbstractArrays of pivoted GaN microdisks have been fabricated on GaN/Si material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. The top and botton faces of the microdisks are optically smooth, suitable for forming optical cavities. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/158537
ISSN
1862-6351
2020 SCImago Journal Rankings: 0.210
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorHui, KNen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorChen, Pen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorTeng, JHen_US
dc.contributor.authorTripathy, Sen_US
dc.contributor.authorChua, SJen_US
dc.creatorsml 151028 - merged-
dc.date.accessioned2012-08-08T09:00:09Z-
dc.date.available2012-08-08T09:00:09Z-
dc.date.issued2007en_US
dc.identifier.citationThe 2006 International Workshop on Nitride Semiconductors (IWN 2006), Kyoto, Japan, 22-27 October 2006. In Physica Status Solidi (C) Current Topics In Solid State Physics, 2007, v. 4 n. 7, p. 2358-2361en_US
dc.identifier.issn1862-6351en_US
dc.identifier.urihttp://hdl.handle.net/10722/158537-
dc.description.abstractArrays of pivoted GaN microdisks have been fabricated on GaN/Si material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. The top and botton faces of the microdisks are optically smooth, suitable for forming optical cavities. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.en_US
dc.languageengen_US
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_US
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physicsen_US
dc.titleStimulated emission from free-standing GaN/Si micro-disk structuresen_US
dc.typeConference_Paperen_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssc.200674761en_US
dc.identifier.scopuseid_2-s2.0-49749129613en_US
dc.identifier.hkuros135803-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-49749129613&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume4en_US
dc.identifier.issue7en_US
dc.identifier.spage2358en_US
dc.identifier.epage2361en_US
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridHui, KN=12139840100en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridChen, P=7408356257en_US
dc.identifier.scopusauthoridZhang, XH=13006006900en_US
dc.identifier.scopusauthoridTeng, JH=7202560065en_US
dc.identifier.scopusauthoridTripathy, S=8698106400en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.issnl1610-1634-

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