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Conference Paper: A 0.9V 2.7μW small-area 100μs+ analog CMOS tunable-delay circuit utilizing miller effect

TitleA 0.9V 2.7μW small-area 100μs+ analog CMOS tunable-delay circuit utilizing miller effect
Authors
Issue Date2008
Citation
2008 Ieee International Conference On Electron Devices And Solid-State Circuits, Edssc, 2008 How to Cite?
AbstractWe report a novel analog delay circuit based on Miller effect that features small die area and tunable delay in the order of 100μs, without using any external component. The delay time can be tuned by varying the biasing current, capacitor sizes, transconductance of the gain-stage transistor and the corresponding output impedances. The turn-on threshold of the delay circuit can also be raised, as required in some applications, by utilizing the body effect of the input transistors. The circuit has a very low startup voltage (≈0.9V) and consumes a very low power (≈2.7μW) in a standard 1 μm pure CMOS process with Vtn ≈ 0.65V and Vtp ≈ 0.8V at 25°C. Circuit operations are elaborated and its function is verified by simulation and silicon measurement. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158582
References

 

DC FieldValueLanguage
dc.contributor.authorNg, DCWen_US
dc.contributor.authorWong, Nen_US
dc.contributor.authorKwong, DKKen_US
dc.date.accessioned2012-08-08T09:00:21Z-
dc.date.available2012-08-08T09:00:21Z-
dc.date.issued2008en_US
dc.identifier.citation2008 Ieee International Conference On Electron Devices And Solid-State Circuits, Edssc, 2008en_US
dc.identifier.urihttp://hdl.handle.net/10722/158582-
dc.description.abstractWe report a novel analog delay circuit based on Miller effect that features small die area and tunable delay in the order of 100μs, without using any external component. The delay time can be tuned by varying the biasing current, capacitor sizes, transconductance of the gain-stage transistor and the corresponding output impedances. The turn-on threshold of the delay circuit can also be raised, as required in some applications, by utilizing the body effect of the input transistors. The circuit has a very low startup voltage (≈0.9V) and consumes a very low power (≈2.7μW) in a standard 1 μm pure CMOS process with Vtn ≈ 0.65V and Vtp ≈ 0.8V at 25°C. Circuit operations are elaborated and its function is verified by simulation and silicon measurement. © 2008 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSCen_US
dc.titleA 0.9V 2.7μW small-area 100μs+ analog CMOS tunable-delay circuit utilizing miller effecten_US
dc.typeConference_Paperen_US
dc.identifier.emailWong, N:nwong@eee.hku.hken_US
dc.identifier.authorityWong, N=rp00190en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2008.4760685en_US
dc.identifier.scopuseid_2-s2.0-63549132360en_US
dc.identifier.hkuros155076-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-63549132360&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridNg, DCW=7201645733en_US
dc.identifier.scopusauthoridWong, N=35235551600en_US
dc.identifier.scopusauthoridKwong, DKK=22734059200en_US

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