File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

TitleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
Authors
Yu, JChen, GLi, CXShafiei, MOu, JZDu Plessis, JKalantar-Zadeh, KLai, PTWlodarski, W
KeywordsGas Sensor
Hydrogen
Rf Sputtering
Schottky Diode
Tantalum Oxide
Issue Date2011
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14 How to Cite?
DOI: http://dx.doi.org/10.1016/j.sna.2011.02.021
AbstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.
DescriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010
Persistent Identifierhttp://hdl.handle.net/10722/158746
ISSN
0924-4247
2021 Impact Factor: 4.291
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000298465100003
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 713510E
Funding Information:

The work herein is supported by the RGC of HKSAR, China (Project No. HKU 713510E).

References
References in Scopus
Grants
High-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics

 

DC FieldValueLanguage
dc.contributor.authorYu, Jen_US
dc.contributor.authorChen, Gen_US
dc.contributor.authorLi, CXen_US
dc.contributor.authorShafiei, Men_US
dc.contributor.authorOu, JZen_US
dc.contributor.authorDu Plessis, Jen_US
dc.contributor.authorKalantar-Zadeh, Ken_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWlodarski, Wen_US
dc.date.accessioned2012-08-08T09:01:08Z-
dc.date.available2012-08-08T09:01:08Z-
dc.date.issued2011en_US
dc.identifier.citationSensors and Actuators A: Physical, 2011, v. 172 n. 1, p. 9-14en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/158746-
dc.descriptionThe journal issue is a special issue of the Eurosensors XXIV Conference, Linz, Austria, 5-8 September 2010-
dc.description.abstractWe developed Pt/tantalum oxide (Ta 2O 5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta 2O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta 2O 5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. © 2011 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators A: Physicalen_US
dc.subjectGas Sensoren_US
dc.subjectHydrogenen_US
dc.subjectRf Sputteringen_US
dc.subjectSchottky Diodeen_US
dc.subjectTantalum Oxideen_US
dc.titleHydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substratesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sna.2011.02.021en_US
dc.identifier.scopuseid_2-s2.0-82755187363en_US
dc.identifier.hkuros204658-
dc.identifier.hkuros225725-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-82755187363&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume172en_US
dc.identifier.issue1en_US
dc.identifier.spage9en_US
dc.identifier.epage14en_US
dc.identifier.isiWOS:000298465100003-
dc.publisher.placeSwitzerlanden_US
dc.relation.projectHigh-Stability and High-Sensitivity MISiC Hydrogen Sensor by using Hf-based Gate Dielectrics-
dc.identifier.scopusauthoridYu, J=35209338200en_US
dc.identifier.scopusauthoridChen, G=36767097200en_US
dc.identifier.scopusauthoridLi, CX=13906721600en_US
dc.identifier.scopusauthoridShafiei, M=24077702700en_US
dc.identifier.scopusauthoridOu, JZ=36550690200en_US
dc.identifier.scopusauthoridPlessis, JD=16239774000en_US
dc.identifier.scopusauthoridKalantarZadeh, K=26540761800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridWlodarski, W=7006793847en_US
dc.identifier.citeulike8927337-
dc.customcontrol.immutablejt 130314-
dc.identifier.issnl0924-4247-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats