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Article: Temperature dependence of the ideality factor of GaAs and Si Schottky diodes

TitleTemperature dependence of the ideality factor of GaAs and Si Schottky diodes
Authors
Lee, TCChen, TPAu, HLFung, SBeling, CD
Issue Date1995
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (A) Applied Research, 1995, v. 152 n. 2, p. 563-571 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.2211520225
AbstractCurrent-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried out and the temperature dependence of the ideality factor and the Schottky barrier height of these diodes are studied using different approaches. Based on certain assumptions and previously proposed models, different diode parameters are extracted and their correlations show that the interface imperfection of a metal-semiconductor contact can contribute to these temperature dependences. Moreover, in this work, the Au/n-Si and Al/n-GaAs diodes are shown to have the most imperfect contact interface amongst the sample diodes.
Persistent Identifierhttp://hdl.handle.net/10722/174721
ISSN
0031-8965
ISI Accession Number ID
WOS:A1995TP66700024

 

DC FieldValueLanguage
dc.contributor.authorLee, TCen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorAu, HLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:47:04Z-
dc.date.available2012-11-26T08:47:04Z-
dc.date.issued1995en_HK
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 1995, v. 152 n. 2, p. 563-571en_HK
dc.identifier.issn0031-8965en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174721-
dc.description.abstractCurrent-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried out and the temperature dependence of the ideality factor and the Schottky barrier height of these diodes are studied using different approaches. Based on certain assumptions and previously proposed models, different diode parameters are extracted and their correlations show that the interface imperfection of a metal-semiconductor contact can contribute to these temperature dependences. Moreover, in this work, the Au/n-Si and Al/n-GaAs diodes are shown to have the most imperfect contact interface amongst the sample diodes.en_HK
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com-
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_HK
dc.titleTemperature dependence of the ideality factor of GaAs and Si Schottky diodesen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssa.2211520225-
dc.identifier.scopuseid_2-s2.0-0029540948en_HK
dc.identifier.hkuros9419-
dc.identifier.volume152en_HK
dc.identifier.issue2en_HK
dc.identifier.spage563en_HK
dc.identifier.epage571en_HK
dc.identifier.isiWOS:A1995TP66700024-
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0031-8965-

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