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Article: Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing

TitleWidely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
Authors
Wang, XCXu, SJChua, SJZhang, ZHFan, WJWang, CHJiang, JXie, XG
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 86 n. 5, p. 2687-2690 How to Cite?
DOI: http://dx.doi.org/10.1063/1.371111
AbstractThe effect of rapid thermal annealing (RTA) on the optical properties of the self-assembled InAs/GaAs quantum dots (QD) by using photoluminescence techniques is studied experimentally. Significant reduction of the energy spacing between ground state and excited state emissions was observed. The high resolution X-ray diffraction (HRXRD) experiments show strong evidence of the interface atoms interdiffusion. Results show that postgrowth RTA can be used to widely tune the intersubband energy spacing between the ground state and the excited state of the InAs/GaAs QD. This gives a range in wavelength tunability for applications like infrared detectors and lasers based on intersubband transitions.
Persistent Identifierhttp://hdl.handle.net/10722/174772
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000082073000050
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, XCen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorZhang, ZHen_US
dc.contributor.authorFan, WJen_US
dc.contributor.authorWang, CHen_US
dc.contributor.authorJiang, Jen_US
dc.contributor.authorXie, XGen_US
dc.date.accessioned2012-11-26T08:47:22Z-
dc.date.available2012-11-26T08:47:22Z-
dc.date.issued1999en_US
dc.identifier.citationJournal of Applied Physics, 1999, v. 86 n. 5, p. 2687-2690-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/174772-
dc.description.abstractThe effect of rapid thermal annealing (RTA) on the optical properties of the self-assembled InAs/GaAs quantum dots (QD) by using photoluminescence techniques is studied experimentally. Significant reduction of the energy spacing between ground state and excited state emissions was observed. The high resolution X-ray diffraction (HRXRD) experiments show strong evidence of the interface atoms interdiffusion. Results show that postgrowth RTA can be used to widely tune the intersubband energy spacing between the ground state and the excited state of the InAs/GaAs QD. This gives a range in wavelength tunability for applications like infrared detectors and lasers based on intersubband transitions.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleWidely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixingen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.371111-
dc.identifier.scopuseid_2-s2.0-0032614526en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032614526&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume86en_US
dc.identifier.issue5en_US
dc.identifier.spage2687en_US
dc.identifier.epage2690en_US
dc.identifier.isiWOS:000082073000050-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, XC=9333737100en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridZhang, ZH=8241791600en_US
dc.identifier.scopusauthoridFan, WJ=34770971100en_US
dc.identifier.scopusauthoridWang, CH=8060383200en_US
dc.identifier.scopusauthoridJiang, J=55228867800en_US
dc.identifier.scopusauthoridXie, XG=8642311000en_US
dc.identifier.issnl0021-8979-

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