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Article: Refined atomic structure of Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface
Title | Refined atomic structure of Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface |
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Authors | |
Keywords | Atomic Structure Silicon Surface |
Issue Date | 2001 |
Citation | Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2001, v. 22 n. 4, p. 427-430 How to Cite? |
Abstract | Refined atomic structure of the Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface was obtained by the quantitative analysis of the intensity-energy spectra from the measurement of a total of 16 symmetrical inequivalent beams through low-energy electron diffraction in the energy range of 30-360 eV. Ga atom is located on the hollow site above the second-layer Si atom, but the distance between Ga adatom and the first Si layer is 0.144 nm. Detailed atomic coordinates for atoms in the first 7 layers of the best-fit structure were given. The average reliable factor of the 16 beams was given, showing that the optimum structure is quite reliable. The calculating results are in good agreement with the experimental data. |
Persistent Identifier | http://hdl.handle.net/10722/174805 |
ISSN | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Deng, BC | en_US |
dc.contributor.author | Xu, G | en_US |
dc.contributor.author | Chen, WH | en_US |
dc.contributor.author | He, YJ | en_US |
dc.contributor.author | Xie, MH | en_US |
dc.contributor.author | Tang, SX | en_US |
dc.date.accessioned | 2012-11-26T08:47:33Z | - |
dc.date.available | 2012-11-26T08:47:33Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.citation | Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2001, v. 22 n. 4, p. 427-430 | en_US |
dc.identifier.issn | 0253-4177 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174805 | - |
dc.description.abstract | Refined atomic structure of the Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface was obtained by the quantitative analysis of the intensity-energy spectra from the measurement of a total of 16 symmetrical inequivalent beams through low-energy electron diffraction in the energy range of 30-360 eV. Ga atom is located on the hollow site above the second-layer Si atom, but the distance between Ga adatom and the first Si layer is 0.144 nm. Detailed atomic coordinates for atoms in the first 7 layers of the best-fit structure were given. The average reliable factor of the 16 beams was given, showing that the optimum structure is quite reliable. The calculating results are in good agreement with the experimental data. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | en_US |
dc.subject | Atomic Structure | en_US |
dc.subject | Silicon | en_US |
dc.subject | Surface | en_US |
dc.title | Refined atomic structure of Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_US |
dc.identifier.authority | Xie, MH=rp00818 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0035322372 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035322372&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 22 | en_US |
dc.identifier.issue | 4 | en_US |
dc.identifier.spage | 427 | en_US |
dc.identifier.epage | 430 | en_US |
dc.publisher.place | China | en_US |
dc.identifier.scopusauthorid | Deng, BC=7101938147 | en_US |
dc.identifier.scopusauthorid | Xu, G=7404263906 | en_US |
dc.identifier.scopusauthorid | Chen, WH=7409644692 | en_US |
dc.identifier.scopusauthorid | He, YJ=24476460300 | en_US |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_US |
dc.identifier.scopusauthorid | Tang, SX=23985983200 | en_US |
dc.identifier.issnl | 0253-4177 | - |