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Article: Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys

TitleTransient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys
Authors
Ohtani, NMokler, SMXie, MHZhang, JJoyce, BA
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1993, v. 62 n. 17, p. 2042-2044 How to Cite?
DOI: http://dx.doi.org/10.1063/1.109473
AbstractReflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si1-xGex using disilane and germane are reported. Transient changes of the oscillation period and hence the growth rate are observed during the growth. Their origin is discussed on the basis of hydrogen desorption kinetics on the alloy surface and attributed to Ge surface segregation effects at the growth interface. This observation provides a unique opportunity for in situ investigations with monolayer-scale resolution, of Ge segregation effects in Si/Si 1-xGex heterostructures.
Persistent Identifierhttp://hdl.handle.net/10722/174863
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:A1993KY86400014

 

DC FieldValueLanguage
dc.contributor.authorOhtani, Nen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:47:51Z-
dc.date.available2012-11-26T08:47:51Z-
dc.date.issued1993en_US
dc.identifier.citationApplied Physics Letters, 1993, v. 62 n. 17, p. 2042-2044-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174863-
dc.description.abstractReflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si1-xGex using disilane and germane are reported. Transient changes of the oscillation period and hence the growth rate are observed during the growth. Their origin is discussed on the basis of hydrogen desorption kinetics on the alloy surface and attributed to Ge surface segregation effects at the growth interface. This observation provides a unique opportunity for in situ investigations with monolayer-scale resolution, of Ge segregation effects in Si/Si 1-xGex heterostructures.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleTransient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloysen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.109473en_US
dc.identifier.scopuseid_2-s2.0-0041638204en_US
dc.identifier.volume62en_US
dc.identifier.issue17en_US
dc.identifier.spage2042en_US
dc.identifier.epage2044en_US
dc.identifier.isiWOS:A1993KY86400014-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridOhtani, N=7103392778en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US
dc.identifier.issnl0003-6951-

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