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Article: Observation of quasibound states in semiconductor single quantum barriers

TitleObservation of quasibound states in semiconductor single quantum barriers
Authors
Luo, HDai, NZhang, FCSamarth, NDobrowolska, MFurdyna, JKParks, CRamdas, AK
Issue Date1993
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 1993, v. 70 n. 9, p. 1307-1310 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevLett.70.1307
AbstractWe report the observation of quasibound states in single semiconductor barriers, in heterostructures with both type-I and type-II band alignments. We disucss the localization and the shape of wave functions of such states, as well as their density of states. In structures with type-II band alignment (CdSeZnTe and CdMnSe/ZnTe) we observe transitions involving electrons confined in the conduction band well and quasibound holes localized in the valence band barrier (both in the CdSe layer). In the system with type-I band alignment (ZnMnSe/ZnSe) transitions between states quasibound in the single ZnMnSe barrier also show clear absorption peaks. © 1993 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/175002
ISSN
0031-9007
2021 Impact Factor: 9.185
2020 SCImago Journal Rankings: 3.688
ISI Accession Number ID
WOS:A1993KN88700031

 

DC FieldValueLanguage
dc.contributor.authorLuo, Hen_US
dc.contributor.authorDai, Nen_US
dc.contributor.authorZhang, FCen_US
dc.contributor.authorSamarth, Nen_US
dc.contributor.authorDobrowolska, Men_US
dc.contributor.authorFurdyna, JKen_US
dc.contributor.authorParks, Cen_US
dc.contributor.authorRamdas, AKen_US
dc.date.accessioned2012-11-26T08:48:44Z-
dc.date.available2012-11-26T08:48:44Z-
dc.date.issued1993en_US
dc.identifier.citationPhysical Review Letters, 1993, v. 70 n. 9, p. 1307-1310en_US
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://hdl.handle.net/10722/175002-
dc.description.abstractWe report the observation of quasibound states in single semiconductor barriers, in heterostructures with both type-I and type-II band alignments. We disucss the localization and the shape of wave functions of such states, as well as their density of states. In structures with type-II band alignment (CdSeZnTe and CdMnSe/ZnTe) we observe transitions involving electrons confined in the conduction band well and quasibound holes localized in the valence band barrier (both in the CdSe layer). In the system with type-I band alignment (ZnMnSe/ZnSe) transitions between states quasibound in the single ZnMnSe barrier also show clear absorption peaks. © 1993 The American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.titleObservation of quasibound states in semiconductor single quantum barriersen_US
dc.typeArticleen_US
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_US
dc.identifier.authorityZhang, FC=rp00840en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevLett.70.1307en_US
dc.identifier.scopuseid_2-s2.0-3342935782en_US
dc.identifier.volume70en_US
dc.identifier.issue9en_US
dc.identifier.spage1307en_US
dc.identifier.epage1310en_US
dc.identifier.isiWOS:A1993KN88700031-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLuo, H=24772750400en_US
dc.identifier.scopusauthoridDai, N=7005754939en_US
dc.identifier.scopusauthoridZhang, FC=14012468800en_US
dc.identifier.scopusauthoridSamarth, N=7006288661en_US
dc.identifier.scopusauthoridDobrowolska, M=10539412000en_US
dc.identifier.scopusauthoridFurdyna, JK=7101686144en_US
dc.identifier.scopusauthoridParks, C=7102976635en_US
dc.identifier.scopusauthoridRamdas, AK=7005631542en_US
dc.identifier.issnl0031-9007-

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