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Article: Optical control of topological quantum transport in semiconductors

TitleOptical control of topological quantum transport in semiconductors
Authors
Issue Date2007
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2007, v. 99 n. 4, article no. 047401 How to Cite?
AbstractIntense coherent laser radiation red-detuned from absorption edge can reactively activate sizable Hall-type charge and spin transport in n-doped paramagnetic semiconductors as a consequence of k-space Berry curvature transferred from the valence band to the photon-dressed conduction band. In the presence of disorder, the optically induced Hall conductance can change sign with laser intensity. © 2007 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/175076
ISSN
2021 Impact Factor: 9.185
2020 SCImago Journal Rankings: 3.688
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYao, Wen_US
dc.contributor.authorMacdonald, AHen_US
dc.contributor.authorNiu, Qen_US
dc.date.accessioned2012-11-26T08:49:07Z-
dc.date.available2012-11-26T08:49:07Z-
dc.date.issued2007en_US
dc.identifier.citationPhysical Review Letters, 2007, v. 99 n. 4, article no. 047401-
dc.identifier.issn0031-9007en_US
dc.identifier.urihttp://hdl.handle.net/10722/175076-
dc.description.abstractIntense coherent laser radiation red-detuned from absorption edge can reactively activate sizable Hall-type charge and spin transport in n-doped paramagnetic semiconductors as a consequence of k-space Berry curvature transferred from the valence band to the photon-dressed conduction band. In the presence of disorder, the optically induced Hall conductance can change sign with laser intensity. © 2007 The American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.titleOptical control of topological quantum transport in semiconductorsen_US
dc.typeArticleen_US
dc.identifier.emailYao, W: wangyao@hku.hken_US
dc.identifier.authorityYao, W=rp00827en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1103/PhysRevLett.99.047401en_US
dc.identifier.pmid17678401-
dc.identifier.scopuseid_2-s2.0-34547439423en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34547439423&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume99en_US
dc.identifier.issue4en_US
dc.identifier.spagearticle no. 047401-
dc.identifier.epagearticle no. 047401-
dc.identifier.isiWOS:000248345800063-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYao, W=35141935300en_US
dc.identifier.scopusauthoridMacDonald, AH=7401581731en_US
dc.identifier.scopusauthoridNiu, Q=7006052653en_US
dc.identifier.issnl0031-9007-

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