Impurity-free vacancy disordering of quantum wells for fabrication of multiple wavelength laser arrays

Abstract

Spin-on dielectric encapsulation layers were used to generate the Ga vacancies at the interface of GaAs and the spin-on dielectric encapsulation layer. The significant shift of the emission photoluminescence peak wavelength was observed in AlGaAs/GaAs and InGaAs/GaAs quantum wells (QWs), as a result of the Ga vacancy-enhanced disordering. How to control the degrees of QW intermixing at selective areas were studied. The selective disordering at selective areas was then used to fabricate multiple wavelength laser arrays. The performance of the multiple wavelength laser is presented and compared with those fabricated at the nondisordered areas. Control of impurity-free vacancy intermixing as well as their compatibility to the laser array processing is discussed.