published patent: SEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCE AND FULL-COLOR MICRODISPLAYS

TitleSEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCE AND FULL-COLOR MICRODISPLAYS
Priority Date2008-10-03 US 12/102760P
Inventors
Issue Date2011
Citation
Korea Published Patent Application KR 20110082162. Korea: Korean Intellectual Property Office (KIPO), 2011 How to Cite?
AbstractMethods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.
Persistent Identifierhttp://hdl.handle.net/10722/176795

 

DC FieldValueLanguage
dc.date.accessioned2012-11-30T08:38:29Z-
dc.date.available2012-11-30T08:38:29Z-
dc.date.issued2011-
dc.identifier.citationKorea Published Patent Application KR 20110082162. Korea: Korean Intellectual Property Office (KIPO), 2011en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176795-
dc.description.abstractMethods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.en_HK
dc.titleSEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCE AND FULL-COLOR MICRODISPLAYSen_HK
dc.typePatenten_US
dc.description.naturepublished_or_final_versionen_US
dc.contributor.inventorChoi, HWen_HK
dc.contributor.inventorHui Kwunnamen_HK
dc.contributor.inventorWang Xianghuaen_HK
patents.identifier.applicationKR 20117010207en_HK
patents.description.assigneeVERSITECH LTD [CN]en_HK
patents.description.countryKorea (South)en_HK
patents.date.publication2011-07-18en_HK
patents.identifier.hkutechidEEE-2007-00265-2-
patents.date.application2009-09-30en_HK
patents.date.priority2008-10-03 US 12/102760Pen_HK
patents.description.ccKRen_HK
patents.identifier.publicationKR 20110082162en_HK
patents.relation.familyCN 102171847 (A) 2011-08-31en_HK
patents.relation.familyDE 112009002311 (T5) 2012-01-19en_HK
patents.relation.familyJP 2012504856 (A) 2012-02-23en_HK
patents.relation.familyKR 20110082162 (A) 2011-07-18en_HK
patents.relation.familyTW 201017863 (A) 2010-05-01en_HK
patents.relation.familyUS 2010084668 (A1) 2010-04-08en_HK
patents.relation.familyUS 7982228 (B2) 2011-07-19en_HK
patents.relation.familyWO 2010037274 (A1) 2010-04-08en_HK
patents.description.kindAen_HK
patents.typePatent_publisheden_HK

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