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Article: Magnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides

TitleMagnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxides
Authors
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2012, v. 112 n. 12, article no. 123710, p. 1-7 How to Cite?
AbstractThe low-temperature transport properties were systematically studied on the electron-doped polycrystalline La1−xHfxMnO3 (x = 0.2 and 0.3) compounds at the presence of external magnetic fields. The resistivity of all samples exhibits a generally low-temperature resistance upturn behavior under zero magnetic field at the temperature of Tmin, which first shifts towards lower temperature at low magnetic field (H < 0.75 T) and then moves back to higher temperature as magnetic fields increase, which is greatly different with the previous results on the hole-doped manganites. The best fitting of low-temperature resistivity could be made by considering both electron-electron (e-e) interactions in terms of T1/2 dependence and Kondo-like spin dependent scattering in terms of lnT dependence at all magnetic fields. Our results will be meaningful to understand the underlying physical mechanism of low-temperature resistivity minimum behavior in the electron-doped manganites.
Persistent Identifierhttp://hdl.handle.net/10722/181711
ISSN
2019 Impact Factor: 2.286
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGuo, Een_US
dc.contributor.authorWang, Len_US
dc.contributor.authorWu, Zen_US
dc.contributor.authorWang, Len_US
dc.contributor.authorLiu, HBen_US
dc.contributor.authorJin, KJen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2013-03-19T03:54:37Z-
dc.date.available2013-03-19T03:54:37Z-
dc.date.issued2012en_US
dc.identifier.citationJournal of Applied Physics, 2012, v. 112 n. 12, article no. 123710, p. 1-7-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/181711-
dc.description.abstractThe low-temperature transport properties were systematically studied on the electron-doped polycrystalline La1−xHfxMnO3 (x = 0.2 and 0.3) compounds at the presence of external magnetic fields. The resistivity of all samples exhibits a generally low-temperature resistance upturn behavior under zero magnetic field at the temperature of Tmin, which first shifts towards lower temperature at low magnetic field (H < 0.75 T) and then moves back to higher temperature as magnetic fields increase, which is greatly different with the previous results on the hole-doped manganites. The best fitting of low-temperature resistivity could be made by considering both electron-electron (e-e) interactions in terms of T1/2 dependence and Kondo-like spin dependent scattering in terms of lnT dependence at all magnetic fields. Our results will be meaningful to understand the underlying physical mechanism of low-temperature resistivity minimum behavior in the electron-doped manganites.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal Of Applied Physicsen_US
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2012, v. 112 n. 12, article no. 123710, p. 1-7 and may be found at https://doi.org/10.1063/1.4770320-
dc.titleMagnetic field mediated low-temperature resistivity upturn in electron-doped La1-xHfxMnO3 manganite oxidesen_US
dc.typeArticleen_US
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=112&spage=123710:1&epage=123710:7&date=2012&atitle=Magnetic+field+mediated+low-temperature+resistivity+upturn+in+electron-doped+La1-xHfxMnO3+manganite+oxidesen_US
dc.identifier.emailGuo, E: ejguo@hku.hken_US
dc.identifier.emailWang, L: wanglin1@hku.hken_US
dc.identifier.emailWu, Z: zpwuhku@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4770320-
dc.identifier.scopuseid_2-s2.0-84886813280-
dc.identifier.hkuros213494en_US
dc.identifier.volume112en_US
dc.identifier.issue12-
dc.identifier.spagearticle no. 123710, p. 1en_US
dc.identifier.epagearticle no. 123710, p. 7en_US
dc.identifier.isiWOS:000312829400053-
dc.identifier.issnl0021-8979-

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