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Article: Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy

TitleSingle domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
Authors
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 102 n. 15, article no. 151604, p. 1-4 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/183144
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorGuo, Xen_US
dc.contributor.authorXu, Zen_US
dc.contributor.authorLiu, HCen_US
dc.contributor.authorZhao, Ben_US
dc.contributor.authorDai, XQen_US
dc.contributor.authorHe, HTen_US
dc.contributor.authorWang, JNen_US
dc.contributor.authorLiu, Hen_US
dc.contributor.authorHo, WKen_US
dc.contributor.authorXie, MHen_US
dc.date.accessioned2013-05-15T01:45:20Z-
dc.date.available2013-05-15T01:45:20Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 102 n. 15, article no. 151604, p. 1-4-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/183144-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 102 n. 15, article no. 151604, p. 1-4 and may be found at https://doi.org/10.1063/1.4802797-
dc.titleSingle domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXu, Z: jackyxu@hku.hken_US
dc.identifier.emailLiu, H: liuhenry@hku.hken_US
dc.identifier.emailHo, WK: howk@hku.hken_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4802797-
dc.identifier.hkuros214285en_US
dc.identifier.volume102en_US
dc.identifier.issue15-
dc.identifier.spagearticle no. 151604, p. 1-
dc.identifier.epagearticle no. 151604, p. 4-

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