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Article: III-nitride Light-emitting Diode with Embedded Photonic Crystals

TitleIII-nitride Light-emitting Diode with Embedded Photonic Crystals
Authors
LI, KHZANG, KYCHUA, SJChoi, HW
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2013, v. 102 n. 18, article no. 181117 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4804678
AbstractA photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. © 2013 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/189022
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000320439900017

 

DC FieldValueLanguage
dc.contributor.authorLI, KHen_US
dc.contributor.authorZANG, KYen_US
dc.contributor.authorCHUA, SJen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2013-09-17T14:24:35Z-
dc.date.available2013-09-17T14:24:35Z-
dc.date.issued2013en_US
dc.identifier.citationApplied Physics Letters, 2013, v. 102 n. 18, article no. 181117-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/189022-
dc.description.abstractA photonic crystal has been embedded within an InGaN/GaN light-emitting diode structure via epitaxial lateral overgrowth of a p-type GaN capping layer. The photonic crystal is a hexagonal-closed-packed array of nano-pillars patterned by nanosphere lithography; the capping layer planarizes the disconnected pillars to form a current-injection device. Optical properties of the nanostructures and devices are extensively studied through a range of spectroscopy techniques and simulations. Most significantly, the emission wavelengths of embedded photonic crystal light-emitting diodes are nearly invariant of injection currents, attributed to partial suppression of the built-in piezoelectric in the quantum wells. © 2013 AIP Publishing LLC.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2013, v. 102 n. 18, article no. 181117 and may be found at https://doi.org/10.1063/1.4804678-
dc.titleIII-nitride Light-emitting Diode with Embedded Photonic Crystalsen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4804678-
dc.identifier.scopuseid_2-s2.0-84877739957-
dc.identifier.hkuros221366en_US
dc.identifier.volume102en_US
dc.identifier.issue18-
dc.identifier.spagearticle no. 181117-
dc.identifier.epagearticle no. 181117-
dc.identifier.isiWOS:000320439900017-
dc.identifier.issnl0003-6951-

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