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Article: Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications

TitleImproved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Authors
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 101 n. 3, article no. 033501 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191384
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, Len_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorJi, Fen_US
dc.contributor.authorChen, JXen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T06:55:34Z-
dc.date.available2013-10-15T06:55:34Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 101 n. 3, article no. 033501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/191384-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 101 n. 3, article no. 033501 and may be found at https://doi.org/10.1063/1.4737158-
dc.titleImproved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLiu, L: lusally@hku.hken_US
dc.identifier.emailXu, J: jpxu@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityXu, J=rp00197en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4737158-
dc.identifier.scopuseid_2-s2.0-84864249990-
dc.identifier.hkuros225968en_US
dc.identifier.volume101en_US
dc.identifier.issue3-
dc.identifier.spagearticle no. 033501-
dc.identifier.epagearticle no. 033501-
dc.identifier.isiWOS:000306748000071-
dc.identifier.issnl0003-6951-

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