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Conference Paper: Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications

TitleCharge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications
Authors
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/191665
ISBN

 

DC FieldValueLanguage
dc.contributor.authorShi, RPen_US
dc.contributor.authorHuang, Xen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2013-10-15T07:14:58Z-
dc.date.available2013-10-15T07:14:58Z-
dc.date.issued2013en_US
dc.identifier.citationThe 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2en_US
dc.identifier.isbn978-1-4673-2523-3-
dc.identifier.urihttp://hdl.handle.net/10722/191665-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.titleCharge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applicationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/EDSSC.2013.6628190-
dc.identifier.scopuseid_2-s2.0-84890515133-
dc.identifier.hkuros226086en_US
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131108-

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