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Conference Paper: Embedding nano-pillar arrays in InGaN light-emitting diodes

TitleEmbedding nano-pillar arrays in InGaN light-emitting diodes
Authors
Li, KHZang, KYChua, SJChoi, HW
KeywordsInGaN
Light-emitting diodes
Nanostructures
Issue Date2014
PublisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html
Citation
The 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC., 25-30 August 2013. In Physica Status Solidi. C, 2014, v. 11 n. 3-4, p. 742-745 How to Cite?
DOI: http://dx.doi.org/10.1002/pssc.201300536
AbstractThe embedded nano-pillar light-emitting diodes are fabricated via nanosphere lithography in combination with epitaxial lateral overgrowth method, followed by standard micro-fabrication process. Apart from output power enhancement due to diffraction and scattering effect from the embedded nano-pillars, the device is demonstrated to have insignificant spectral blue shift with increasing injection currents, which is dependent on the built-in piezoelectric field that is partially suppressed by strain relaxation of nanostructured quantum wells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
DescriptionThese journal issues entitled: Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10)
Persistent Identifierhttp://hdl.handle.net/10722/204044
ISSN
1610-1642
2020 SCImago Journal Rankings: 0.210
ISI Accession Number ID
WOS:000346071300092

 

DC FieldValueLanguage
dc.contributor.authorLi, KHen_US
dc.contributor.authorZang, KYen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2014-09-19T20:02:02Z-
dc.date.available2014-09-19T20:02:02Z-
dc.date.issued2014en_US
dc.identifier.citationThe 10th International Conference on Nitride Semiconductors (ICNS-10), Washington, DC., 25-30 August 2013. In Physica Status Solidi. C, 2014, v. 11 n. 3-4, p. 742-745en_US
dc.identifier.issn1610-1642-
dc.identifier.urihttp://hdl.handle.net/10722/204044-
dc.descriptionThese journal issues entitled: Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10)-
dc.description.abstractThe embedded nano-pillar light-emitting diodes are fabricated via nanosphere lithography in combination with epitaxial lateral overgrowth method, followed by standard micro-fabrication process. Apart from output power enhancement due to diffraction and scattering effect from the embedded nano-pillars, the device is demonstrated to have insignificant spectral blue shift with increasing injection currents, which is dependent on the built-in piezoelectric field that is partially suppressed by strain relaxation of nanostructured quantum wells. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.-
dc.languageengen_US
dc.publisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/journal/122311674/grouphome/home.html-
dc.relation.ispartofPhysica Status Solidi. C: Current Topics in Solid State Physicsen_US
dc.subjectInGaN-
dc.subjectLight-emitting diodes-
dc.subjectNanostructures-
dc.titleEmbedding nano-pillar arrays in InGaN light-emitting diodesen_US
dc.typeConference_Paperen_US
dc.identifier.emailLi, KH: khei@eee.hku.hken_US
dc.identifier.emailChoi, HW: hwchoi@hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1002/pssc.201300536-
dc.identifier.scopuseid_2-s2.0-84898549167-
dc.identifier.hkuros236768en_US
dc.identifier.hkuros236793-
dc.identifier.volume11-
dc.identifier.issue3-4-
dc.identifier.spage742-
dc.identifier.epage745-
dc.identifier.isiWOS:000346071300092-
dc.publisher.placeGermany-
dc.customcontrol.immutablesml 141024-
dc.identifier.issnl1610-1634-

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